IRF3704STRL

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	87W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1996pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	19nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	9 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	77A (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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<h2>Introduction</h2>The IRF3704STRL is a transistor that is used in many fields. It is a n-channel enhancement-mode power Field-Effect Transistor. It has many advantages that enable it to be used in a variety of applications. These advantages include a low on resistance, a large current capability, and a simple gate drive. In this article, the application areas and working principle of the IRF3704STRL will be discussed.<h2>Application Field of IRF3704STRL</h2>The IRF3704STRL is used in a wide range of applications. It is commonly used in DC/DC converters, power amplifiers, and switching regulators. It is also used in the automotive, consumer electronics, and marine industries. The device is commonly used in applications that require low on-resistance and large current capability, such as motor drives, automotive applications, solar inverters, and AC inverters.The device is also used in AC/DC converters, lighting applications, and renewable energy applications. It is suitable for use in a variety of power topologies and can be used as a gate drive transistor in a PFC boost circuit. The device is also used in power management systems, power line communications, and signal processing.<h2>Working Principle</h2>The IRF3704STRL is an n-channel enhancement-mode power Field-Effect Transistor. It is composed of a single n-type layer of silicon and a source and drain. When a voltage is applied to the gate, it creates an electric field between the source and the drain that increases the conductivity of the n-type layer. This allows current to flow more freely between the source and the drain. The amount of current that can flow through the device is determined by the amount of voltage applied to the gate.The device exhibits a low on-resistance, which means that it can handle high currents. The device also has a low gate charge, which makes it easy to drive. The device has a low gate-source threshold voltage, which allows it to be used in applications where low gate voltages are required.<h2>Conclusion</h2>The IRF3704STRL is a popular n-channel enhancement-mode power Field-Effect Transistor that is used in a variety of applications. It has many advantages that make it suitable for a wide range of applications, such as low on resistance, large current capability, and a simple gate drive. Understanding the application fields and the working principle of the IRF3704STRL will enable one to make an informed decision when selecting a device for their application.

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