IRF3704ZCS

Vgs(th) (Max) @ Id:	2.55V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	57W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1220pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	13nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	7.9 mOhm @ 21A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	67A (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The IRF3704ZCS is a single N-Channel Enhancement Mode Metal Oxide Semiconductor field effect transistor (MOSFET) designed for use as a high efficiency switch in a wide variety of applications. It has a drain source breakdown voltage (VDS) of 250V, a power dissipation (PD) of 300W, and a drain current (ID) of 56A. The device’s C-type drain and source connection design provide a robust and efficient switching performance, making it suitable for use in a variety of high current applications. This article will discuss the application field and working principle of the IRF3704ZCS MOSFET.

Application Field of IRF3704ZCS

The IRF3704ZCS MOSFET is intended for use as an efficient and robust power switch in applications where high output current is required, such as high current DC/DC converters, motor control and other power management applications. It is suitable for use in the majority of digital power conversion designs due to its high efficiency and minimal losses, making it an ideal choice for use in motor controllers and power conversion applications. The device’s high current and robust operation also make it suitable for use in a range of other high current applications, including automotive, lighting, and power electronics.

Working Principle of IRF3704ZCS

The IRF3704ZCS MOSFET employs an N-channel enhancement-type structure, meaning the device is normally off and must be turned on with a gate signal. The device features an integrated high input impedance gate, and when a gate signal is applied, current will flow from the source to the drain, allowing the device to switch on. The drain and source are connected in a C-type configuration, where the drain is connected to the source on the top and the bottom of the transistor. This provides a robust surface structure and inherent Body Effect Compensation (BEC), allowing the device to switch on with higher efficiency and faster response times.

The device’s drain-source breakdown voltage (V_DS) is 250V, which allows for high current applications. The device’s drain current (I_D) is 56A and its power dissipation (P_D) is 300W, making it suitable for use in a wide variety of demanding applications. The device also features a low gate-to-drain charge (Q_GD) of 90nC, which allows for faster turn-off times, making it an ideal for use in applications where higher switching speed is required.

The device is offered in a TO-220F package, which allows for a thermal dissipation of 2.6W/°C when used with a suitable heat sink. This allows the device to be used in a variety of thermal requirements without compromising performance. Furthermore, the device features a high surge current limit of 210A, which provides the device with an extra level of protection against inductive loads.

In conclusion, the IRF3704ZCS is a robust and efficient single N-Channel Enhancement Mode MOSFET designed for high current applications. It is a suitable choice for a wide range of high current switching applications, including motor control and digital power conversion designs. The device features a high input impedance gate, high power dissipation rating, and low gate-to-drain charge, allowing it to be used in high current applications with high efficiency and fast switching speeds.

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