Allicdata Part #: | IRF3711ZCS-ND |
Manufacturer Part#: |
IRF3711ZCS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 92A D2PAK |
More Detail: | N-Channel 20V 92A (Tc) 79W (Tc) Surface Mount D2PA... |
DataSheet: | IRF3711ZCS Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.45V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2150pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 92A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRF3711ZCS is a single N-Channel Power MOSFET manufactured by International Rectifier (IR). The device is constructed of thermally efficient package, which offers improved thermal performance and lower power losses. This type of transistors is used in power conversion applications where reliable, low input current and high efficiency are required.
The IRF3711ZCS has the basic or “top level” Structure of an N-Channel enhanced mode MOSFET. Its symmetrical low RDS(ON) structure, innovative design, and low conduction loss, provide higher power and increased efficiency in a wide range of applications, such as motor and signal conditioning control, high-current switching, and power supply regulation.
The IRF3711ZCS application field is wide and varied. The device is suitable for a variety of power related applications including recreational vehicles, automotive, computer motherboards and other electronic control systems. It is a widely used MOSFET type in power electronics systems for power conversion, RF power amplifiers and motor control. Its properties allow for low voltage and low power dissipation, superior performance and effective thermal management.
The IRF3711ZCS’s working principle is fairly uncomplicated and is based on the concept of boosting. This is essentially the act of increasing drain current flow and voltage while significantly reducing power draw. The high density N-Channel MOSFETs also provide superior power management to reduce power dissipation. In addition, the IRF3711ZCS is designed with a low input capacitance, enabling fast switching.
The device also features excellent linearity, intrinsic fast switching capabilities, low device losses and on-chip thermal protection. The on-chip thermal protection ensures that the device does not overheat, reducing the risk of damage or performance degradation. This makes the IRF3711ZCS an ideal choice for regulated power supplies, motor driver and solenoid control.
The IRF3711ZCS is a highly reliable power MOSFET for a wide range of applications. The superior performance properties make it suitable for a broad range of switching regulations, motion control and high current switching. It also makes an excellent choice for power supplies and automotive applications as well as for industrial, consumer and consumer electronic applications.
The specific data is subject to PDF, and the above content is for reference
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