| Allicdata Part #: | IRF6100TR-ND |
| Manufacturer Part#: |
IRF6100 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET P-CH 20V 5.1A FLIP-FET |
| More Detail: | P-Channel 20V 5.1A (Ta) 2.2W (Ta) Surface Mount 4-... |
| DataSheet: |  IRF6100 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
| Package / Case: | 4-FlipFet™ |
| Supplier Device Package: | 4-FlipFet™ |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.2W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1230pF @ 15V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 65 mOhm @ 5.1A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 5.1A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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IRF6100 is a fast and rugged N-Channel Enhancement Mode Field Effect Transistor (FET) with a comparable RDS (ON) value in the ohmic range, suitable for multiple voltage applications. This FET belongs to the Single FET family, which means it has only one internal FET. This FET is distinct from other FETs because of its unique feature of electrically isolating the drain and gate circuit, reducing the risk of short circuits. This makes IRF6100 suitable for many high-reliability applications.The IRF6100 is highly rugged, withstanding temperatures up to 200°C. This FET can also operate at frequencies up to 10MHz, reducing the risk of overheating components. It also has an extremely low gate threshold voltage, which enables higher efficiency and lower static currents on both its drain and gate.The IRF6100 is suitable for both voltage- and current-controlled applications. In a voltage-controlled application, the gate of the FET is responsible for controlling the FET’s drain current. The FET’s gate voltage must always remain within the threshold voltage of the FET, typically -4V to -6V, in order to maintain its performance. In a current-controlled application, the FET’s drain current is controlled by its gate voltage. The voltage must be within a range of 0V to 12V in order to operate the FET as required.
The IRF6100 also has very low input and output capacitance, making it suitable for applications requiring high-speed switching. This lower capacitance ensures that signal distortion is kept to a minimum. It also has an extremely high breakdown voltage rating of 72V, which is suitable for use in power supplies. The IRF6100 also features a very low output resistance, reducing noise while increasing signal stability.In order to operate the IRF6100, a DC voltage must be applied to the gate pin and this voltage must be within the specified range. The gate voltage should be set in such a way that it is above the threshold voltage (VGSth). This will ensure that the FET successfully switches on, resulting in the drain current flowing through the FET. The drain current should be carefully monitored and should stay within the specified current range. The IRF6100 should be operated at its maximum drain current, as this will increase its efficiency and reduce the risk of damaging the FET.In addition, it is important to carefully monitor the drain voltage when operating the IRF6100. The drain voltage needs to stay within its specified range in order to ensure the FET functions properly. If the drain voltage exceeds its maximum rating, the FET will be destroyed. The IRF6100 is very versatile and can be used for multiple applications, including high-efficiency power supplies, power switching devices, audio amplifiers, and signal processing circuits. The FET can also be used in automotive electronics, where its fast switching speed makes it suitable for controlling solenoids, relays, motors, and other devices.In conclusion, the IRF6100 is an efficient, fast and rugged N-Channel Enhancement Mode FET with a comparable RDS (ON) value in the ohmic range, which makes it suitable for high-reliability applications. Its low gate threshold voltage and low capacitance make it suitable for high-speed switching applications. It can also be used in automotive electronics and other applications, where its excellent speed and efficiency make it suitable for controlling solenoids, relays, motors, and other devices.
The IRF6100 also has very low input and output capacitance, making it suitable for applications requiring high-speed switching. This lower capacitance ensures that signal distortion is kept to a minimum. It also has an extremely high breakdown voltage rating of 72V, which is suitable for use in power supplies. The IRF6100 also features a very low output resistance, reducing noise while increasing signal stability.In order to operate the IRF6100, a DC voltage must be applied to the gate pin and this voltage must be within the specified range. The gate voltage should be set in such a way that it is above the threshold voltage (VGSth). This will ensure that the FET successfully switches on, resulting in the drain current flowing through the FET. The drain current should be carefully monitored and should stay within the specified current range. The IRF6100 should be operated at its maximum drain current, as this will increase its efficiency and reduce the risk of damaging the FET.In addition, it is important to carefully monitor the drain voltage when operating the IRF6100. The drain voltage needs to stay within its specified range in order to ensure the FET functions properly. If the drain voltage exceeds its maximum rating, the FET will be destroyed. The IRF6100 is very versatile and can be used for multiple applications, including high-efficiency power supplies, power switching devices, audio amplifiers, and signal processing circuits. The FET can also be used in automotive electronics, where its fast switching speed makes it suitable for controlling solenoids, relays, motors, and other devices.In conclusion, the IRF6100 is an efficient, fast and rugged N-Channel Enhancement Mode FET with a comparable RDS (ON) value in the ohmic range, which makes it suitable for high-reliability applications. Its low gate threshold voltage and low capacitance make it suitable for high-speed switching applications. It can also be used in automotive electronics and other applications, where its excellent speed and efficiency make it suitable for controlling solenoids, relays, motors, and other devices.
The specific data is subject to PDF, and the above content is for reference
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