| Allicdata Part #: | IRF610L-ND |
| Manufacturer Part#: |
IRF610L |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 200V 3.3A TO-262 |
| More Detail: | N-Channel 200V 3.3A (Tc) 3W (Ta), 36W (Tc) Through... |
| DataSheet: | IRF610L Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | TO-262 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3W (Ta), 36W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 140pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 8.2nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3.3A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRF610L is a 30A, 500V single N-Channel depletion-mode MOSFET. This MOSFET is part of the power MOSFET product family, designed to enable a variety of MOSFET based power management applications where high speed and low power loss are desired.
Application Fields
The IRF610L offers an ideal combination of fast switching speed and high power, making it suitable for a variety of applications such as switch-mode power supplies, dc-dc converters, high-side and low-side switches, motor control, etc. The device features a maximum operating junction temperature of +175°C and is therefore capable of handling high power levels with minimal power dissipation. The device is also suitable for high-frequency applications such as class D audio amplifiers, RF power amplifiers, wireless transmitters, and satellite receivers.
Working Principle
The IRF610L is a single N-Channel depletion-mode MOSFET. It consists of a layer of N-type semiconductor material between two source and drain contacts. The voltage applied to the gate terminal controls the currents flowing through the channel between the source and drain. When a positive voltage is applied to the gate, electrons are attracted to the gate region, increasing the number of free electrons in the channel. This creates a low resistance path between the source and the drain, allowing current to flow. When the gate voltage is reduced, the number of free electrons in the channel is decreased and the resistance between the source and drain increases, reducing the current. This is known as \'depletion-mode\' operation.
The IRF610L also features a Kelvin source contact, allowing for fast switching speed and low power dissipation. The Kelvin source contact allows for the source lead to be driven independently from the gate-source voltage, ensuring that no power is dissipated in this lead. This dramatically reduces switching time, enabling faster operation in high-frequency applications.
In conclusion, the IRF610L is a reliable and powerful single N-Channel depletion-mode MOSFET, capable of handling high power levels with minimal power dissipation. Its high switching speed and low power loss make it well-suited for a variety of power management applications, such as switch-mode power supplies, motor control, class D audio amplifiers, and more. It\'s an excellent choice for any application that requires high efficiency and reliable performance.
The specific data is subject to PDF, and the above content is for reference
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IRF610L Datasheet/PDF