| Allicdata Part #: | IRF620L-ND |
| Manufacturer Part#: |
IRF620L |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 200V 5.2A TO-262 |
| More Detail: | N-Channel 200V 5.2A (Tc) Through Hole I2PAK |
| DataSheet: | IRF620L Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | I2PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | -- |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 260pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 800 mOhm @ 3.1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5.2A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IRF620L is a Silicon Power MOSFET of N-Channel which is considered as one of the most efficient devices in the industry for controlling power. The device has many attractive features and advantages, some of which make it suitable for use in various applications. This article will explore the application field and working principle of the IRF620L.
The application field of the IRF620L consists of various fields including switching, amplification, and power-level control applications. The device is an ideal choice for applications in which high power and enhanced switching speed is desired. Examples of these applications include DC/DC power converters, lighting ballasts, motor speed controls, and other similar applications.
The working principle of the IRF620L includes the use of a channel of N-type MOSFET, which uses the volume of electrons and holes in the channel to switch the device on and off. When a positive signal is given to the gate of the device, the channel of the MOSFET will be opened, allowing electrons to flow through the channel, thus switching the device on. When the same signal is reversed, the channel will be closed, blocking the flow of electrons and switching the device off.
The IRF620L is also known for its excellent performance in terms of thermal management. The device has a very low thermal resistance which results in improved cooling performance, reduced heat sink size and increased power efficiency. IRF620L also offers good voltage handling capabilities, which provide the excellent barrier protection for the device.
IRF620L is also an energy-efficient device which helps to reduce energy consumption and overall operating cost. The device is known for its low switching losses, enabling users to reduce further energy consumption and operating costs. In addition, the device is also known for its low leakage current, thus helping to reduce the risk of electromigration and lower power consumption during operation.
In summary, the IRF620L is an ideal device for use in many power control applications. The device is characterized by excellent performance in terms of thermal management, voltage handling, and low switching losses, providing users with improved power efficiency and an overall reduction in energy consumption.
The specific data is subject to PDF, and the above content is for reference
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IRF620L Datasheet/PDF