Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3W (Ta), 50W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	260pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	14nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	800 mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	5.2A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRF620STRL Application Field and Working Principle

The IRF620STRL is a Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) which is typically used in power management circuits and control systems. This particular transistor is characterized by a drain current of 500mA, a voltage of 25V and a power dissipation of 300W.The IRF620STRL is a single-channel device which works on the principle of a field effect transistor (FET). It is primarily composed of three elements – a source, a drain and a gate. By controlling the amount of charge that passes through the source and drain, the output of the MOSFET can be controlled.The FETs integrated within the IRF620STRL are active switches. This means that when a positive voltage is applied to the gate, it opens up a smaller channel between source and drain, allowing charge to pass through. Inversely, a negative voltage on the gate causes the channel to close, blocking the flow of charge.The current between source and drain of the IRF620STRL is controlled by the threshold voltage of the FETs. This is the voltage that must be applied to the gate in order to open up the channel between source and drain. The threshold voltage is given as VGS(th), which is typically in the range of -2.0 to -2.6V in this particular type of transistor.The IRF620STRL makes use of a single channel which is capable of blocking higher voltages while simultaneously allowing higher currents to flow through. It can be used in applications such as power distribution, automotive electronics, and home automation. The IRF620STRL can also be used as a low-noise switching element in audio amplifiers, as it offers a low on-resistance value of 4 ohms.In summary, the IRF620STRL is a single-channel Power MOSFET. Its integrated FETs operate on the principle of a field effect transistor and are activated by applying a voltage to the gate. The current between source and drain is controlled by the threshold voltage of the FETs, which is typically -2.0 to -2.6V. This type of transistor is mainly used in applications related to power management, automotive electronics and home automation.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description