| Allicdata Part #: | IRF620STRRPBF-ND |
| Manufacturer Part#: |
IRF620STRRPBF |
| Price: | $ 0.84 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 200V 5.2A D2PAK |
| More Detail: | N-Channel 200V 5.2A (Tc) 3W (Ta), 50W (Tc) Surface... |
| DataSheet: | IRF620STRRPBF Datasheet/PDF |
| Quantity: | 1000 |
| 800 +: | $ 0.75436 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3W (Ta), 50W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 260pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 800 mOhm @ 3.1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5.2A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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IRF620STRRPBF is a voltage-controlled field effect transistor (FET). It consists of a source, a drain, and a gate. When a voltage is applied to the gate, current can pass through the source-drain channel. It is used in various applications, such as switching, amplification, and signal processing.
Applications
IRF620STRRPBF has a wide range of applications, including power switching and linear applications. It can be used in pulse width modulator circuits, voltage regulators, motor drives and in power management systems. It is also used in high voltage and low noise amplifier circuits, including low noise amplifiers that require high linearity. IRF620STRRPBF is used in telecommunication systems, such as signal amplifiers, signal processors, and high-speed data converters. IRF620STRRPBF is also used in computer, consumer electronics, automotive, and aerospace applications.
Working Principle
When the gate of an IRF620STRRPBF is held at a negative voltage, the drain and source are isolated. When the gate is taken to a positive voltage, current begins to flow through the source-drain channel and the transistor is “on”. The current through the channel is determined by the application of the gate voltage. The power dissipation of an IRF620STRRPBF can be determined by the application of the drain-source voltage. In addition, the IRF620STRRPBF can operate in either enhancement or depletion mode, depending on the type of device.
In enhancement mode, a positive voltage applied to the gate creates an inversion layer at the source-drain junction, allowing current to flow. In depletion mode, a negative voltage applied to the gate reduces the current by increasing the resistance at the source-drain junction. The maximum drain-source voltage and current ratings of the IRF620STRRPBF must be taken into account when designing an application.
Conclusion
IRF620STRRPBF is a voltage-control device and can be used in a variety of applications, ranging from power switching and linear applications to communication systems and high-speed data converters. It operates in either enhancement or depletion modes and its maximum current and voltage ratings must be taken into account when designing an application. IRF620STRRPBF is widely used in industries such as automotive, aerospace, computer, and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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IRF620STRRPBF Datasheet/PDF