Allicdata Part #: | 497-12489-5-ND |
Manufacturer Part#: |
IRF630FP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 200V 9A TO-220FP |
More Detail: | N-Channel 200V 9A (Tc) 30W (Tc) Through Hole TO-22... |
DataSheet: | IRF630FP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 700pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | MESH OVERLAY™ II |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 4.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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.In electronics, an IRF630FP is a type of power MOSFET commonly used in high-power circuits. A MOSFET, or Metal Oxide Field Effect Transistor, is an amplifier that can control the voltage around the gate and in turn control the current passing through its drain-source junction. It is the most important semiconductor next to the diode, because it has very low on-resistance and can handle exceptionally high peak currents.
The IRF630FP is a single-gate, unipolar field effect transistor. Unipolar means that the flow of electrical charge is unidirectional and field effect refers to the ability to manipulate the voltage in an electrical field. The transistor employs a source, drain, and gate electrode that each performs specific tasks. The source is the negative terminal and the drain is the positive of the power source. Between the two, a voltage difference is maintained by the field effect that controls the maximal current through the junction of the source and drain. The gate electrode regulates the flow of electrons below the surface of the transistor.
The IRF630FP has several advantages over other MOSFETs, the most important of which is its high power handling capability. It has a relatively low on-resistance, in the order of 0.0017 ohms, giving it a high level of current handling capacity. Additionally, it has a high voltage rating of 600V. The low output capacitance and low gate charge of the transistor makes it suitable for high frequency switching applications. Finally, the transistor has very low gate threshold voltage and low thermal resistance for better heat dissipation.
Since its introduction, the IRF630FP has become the transistor of choice for a number of applications. It is often used in audio power amplifiers to drive large loudspeakers, as well as in switching power supplies and inverters for industrial and commercial applications. The transistor is also frequently used in high-voltage drivers, as it can control current up to 600V with a relatively low input current. It is also used in DC-DC converters, motor drivers, and other automotive, industrial, and consumer applications.
In summary, the IRF630FP is a single-gate, unipolar field effect transistor that is used in a wide range of applications. Its main advantage is its high power handling capability, allowing it to efficiently control currents of up to 600V. The transistor’s low on-resistance also makes it suitable for high frequency switching applications, while its low-threshold voltage and low thermal resistance allow for better heat dissipation. As such, it is a versatile and reliable transistor for a variety of high-power applications.
The specific data is subject to PDF, and the above content is for reference
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