| Allicdata Part #: | IRF634S-ND |
| Manufacturer Part#: |
IRF634S |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 250V 8.1A D2PAK |
| More Detail: | N-Channel 250V 8.1A (Tc) 3.1W (Ta), 74W (Tc) Surfa... |
| DataSheet: | IRF634S Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.1W (Ta), 74W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 770pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 450 mOhm @ 5.1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8.1A (Tc) |
| Drain to Source Voltage (Vdss): | 250V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IRF634S is a type of Insulated-Gate Bipolar Transistor (IGBT). It is a high current MOSFET that is used in many applications because of its versatile characteristics and high power handling capability. It is ideal for power applications, switching and motor control, as well as other structures that require the high current handling capacity of a MOSFET and the voltage control of a bipolar transistor.
IRF634S is designed with a high voltage rating, low on-state resistance, low power consumption and high current handling capacity. It has a large area of operation and can easily handle the output power from small to midsize circuits. It also has a low gate-to-source capacitance for faster switching speeds. This makes it suitable for applications such as high speed switching and power management.
The main purpose of using an IGBT is to reduce power loss and improve the efficiency of certain power control systems. This is done by using the combination of properties of both a MOSFET and a bipolar transistor. The high current MOSFET part of the IGBT allows it to switch quickly while the bipolar transistor part lets it control and manage the voltage. This combination makes IRF634S suitable for switching high power loads.
In terms of working principle, IRF634S works via pulse width modulated current cutting. It relies on a sharp rise and fall of voltage, which is usually delivered through a PWMgate output. The on and off timing of the high-current load is determined by the choice of the frequency and the duty cycle of the pulse width modulation. This is why IGBTs are often chosen when applications involve higher power pulses.
Specific applications for IRF634S includes its use in motor drives, power supplies and DC converters including LED drivers, Uninterruptible Power Supplies (UPS), Home Inverters and Switch-Mode Power Supplies (SMPS). The device can also be used to switch various types of loads such as resistive and inductive.It can be used in applications with high loads, switching surges and transients, and can be used in place of traditional thyristors and thyristor stacks.
In conclusion, IRF634S is a versatile IGBT with a high current handling capacity and low on-state resistance. It can handle the output power of small to midsize circuits and can be used in a variety of applications with its high voltage rating and low gate-to-source capacitance.It works on the principle of pulse width modulation current cutting and can be used in motor drives, power supplies and DC converters.
The specific data is subject to PDF, and the above content is for reference
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IRF634S Datasheet/PDF