IRF6616

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRF6616 is a Power MOSFET produced by International Rectifier. It\'s a member of the International Rectifier EasyPACK that are integrated-circuit power modules created mainly to provide optimized solutions in today\'s power electronic applications. The IRF6616 MOSFET inherits plenty of desirable electrical and thermal characteristics from the older generations of Silicon MOSFETs, making it one of the best devices for a plethora of applications.

The IRF6616 is a vertical N-channel power MOSFET, with a low gate charge variation, increasing reliability and allowing a high sourcing capability in a single device. The N-channel enhancement mode MOSFETs are ideal for high-frequency switching applications, with an typical frequency range of up to 1.1MHz. It\'s highest drain current is as high as 200 amperes, with a drain source voltage of 1000 V. The on-resistance of this device is as low as 149 mΩ. The reasonable body diode recovery time, the ability to withstand high peak voltages and the reasonable Gate-Source charge make this device a great choice for voltage and current handling applications. Its reasonable gate rise and fall time of 2μs reduces the switching losses. The package was specifically designed to facilitate easy heat dissipation through a large metal contact area. This increases its overall efficiency and thermal performance.

The certain application field of the IRF6616 is high voltage Flyback converters. The Online UPS systems are another good place to use them due to their high peak power capabilities. IRF6616 MOSFETs are often used to construct low-loss and high-efficiency DC-DC converters. The motor drive applications also use them heavily due to the large gate charge of the device. The IRF6616 MOSFETs could be used as power switch in relay replacement setups where large current loads need to be controlled. These FETs can be also used in active PFC stages.

Moreover, the working principle of the IRF6616 can be described in just a few sentences. The essence of a MOSFET, the majority of its functioning is derived from the PN junction formed by its Drain Source region, in which an n-type material is driven by a p-type region. When the gate-source voltage went above the threshold, inversion layer change from p-type to n-type, this enable the flow of current from drain source, like an conductive channel came from source to drain. At this moment the device is said to be ‘ON’. When the gate-source voltage went beneath the threshold or become zero, drain-source channel disable and losed its conductivity in the PN Junction, so the device is said to be ‘OFF’.

Ferro-MOSFETs operate differently, and design in respect to the structure of its semiconductor materials, but their purpose is to create an easy access between two terminals, drain and source. The IRF6616 comprises of two major MOSFET, made up of back to back structures. This device is symmetrical, allowing a higher current, higher efficiency and a higher voltage across the drain and source, ranging from -60 V to 1000 V, with a drain current of 200 A. All this make the IRF6616 the MOSFET of choice for any heavy power-switching applications.

In conclusion, the IRF6616 is a high performance power MOSFET designed to rectify current and control massive loads of current. Its high resilience to frequency, temperature and voltage as well as its easy heat dissipation through a large contact area, make this device a wise choice for any high performance and heavy current application.

The specific data is subject to PDF, and the above content is for reference