Allicdata Part #: | IRF6619TR-ND |
Manufacturer Part#: |
IRF6619 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 30A DIRECTFET |
More Detail: | N-Channel 20V 30A (Ta), 150A (Tc) 2.8W (Ta), 89W (... |
DataSheet: | IRF6619 Datasheet/PDF |
Quantity: | 9600 |
Vgs(th) (Max) @ Id: | 2.45V @ 250µA |
Package / Case: | DirectFET™ Isometric MX |
Supplier Device Package: | DIRECTFET™ MX |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.8W (Ta), 89W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5040pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 57nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 2.2 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Ta), 150A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRF6619 MOSFET is a top-level device in the family of advanced insulated-gate field-effect transistors (IGFETs). It is designed to fulfill efficient device performance requirements under the most stringent layout and design restrictions. This is achieved with superior design capability, state-of-the-art integrated process technology, and an advanced compression technology.
The IRF6619 features excellent power handling capability, low RDS(ON) and Coss, to minimize power loss, and a fast switching speed for minimal switching losses. It offers superior on-state current handling and the latching current required for control is low. It also offers an excellent thermal performance, enabling high power dissipation.
The IRF6619 has a number of potential uses in a wide range of applications. It can be used as a power transfer switch in automotive applications, as a protection device in other types of circuits, as a hot switch, and as a current switch. It is also commonly used in power management systems, solar energy systems, and other types of power supply systems.
The IRF6619 works on the principle of voltage-controlled resistance. It is a three-terminal n-channel MOSFET, consisting of an insulated gate, a drain, and a source. The source and drain are the two electrodes attached to the conducting channel of the MOSFET. The insulated gate is used to control the resistance of the conducting channel.
When a voltage is applied to the gate, electrons are attracted to the gate, causing the resistance of the channel to decrease. Conversely, when a negative voltage is applied to the gate, electrons are repelled from the gate, raising the resistance of the channel. By controlling the voltage across the gate terminal, the resistance of the channel can be controlled, allowing current flow to the drain terminal.
The IRF6619 can be used in a variety of applications, offering superior power handling capability, low RDS(ON) and Coss, and a fast switching speed. It is an excellent choice for applications such as power management systems, solar energy systems, power transfer switches, and protection devices.
The specific data is subject to PDF, and the above content is for reference
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