| Allicdata Part #: | IRF6635-ND |
| Manufacturer Part#: |
IRF6635 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 32A DIRECTFET |
| More Detail: | N-Channel 30V 32A (Ta), 180A (Tc) 2.8W (Ta), 89W (... |
| DataSheet: | IRF6635 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2.35V @ 250µA |
| Package / Case: | DirectFET™ Isometric MX |
| Supplier Device Package: | DIRECTFET™ MX |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.8W (Ta), 89W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5970pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 71nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 1.8 mOhm @ 32A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 32A (Ta), 180A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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IRF6635 is a type of transistor which belongs to the family of FETs and MOSFETs, more precisely Single FETs and MOSFETs. It is widely used in many different applications to control high current loads and switching. This guide will explain what this type of transistor is and when, where and how it can be used.
The IRF6635 is a Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET). It is a unipolar transistor that can control high current loads (up to 75 A) with switching frequencies up to 20 kHz. It has relatively low input capacitance and gate-source capacitance, which make it suitable for high-speed switching applications. The device has a drain to source voltage of 60 V and a drain current of 75A. The gate-source voltage is rated from -20 V to +20 V.
The IRF6635’s working principle is similar to other MOSFETs. It is a voltage-controlled device, meaning that its output is a function of the gate voltage applied. When the gate voltage is zero, it is in a non-conductive state and when the gate voltage rises, the device begins to conduct. This is because when the gate voltage rises, it creates an electric field which attracts the majority carriers in the device (electrons in the n-channel version of IRF6635). This causes the silicon dioxide (SiO2) layer to become depleted of electrons and become conductive. This allows the current to flow between the drain and the source of the device.
The IRF6635 is used in many different applications such as inverter circuits, chopper circuits, speed regulator circuits, motor-control circuits, and motor-driver circuits. It is also used in power supplies, DC motor speed control, and AC motor speed control. This device can also be used in high frequency switching circuits, high-power amplifiers, and high-voltage switching circuits. It is also used to drive large loads such as motors and lamps, and can be used in linear applications such as current sources, voltage sources and current limiting circuits.
Overall, the IRF6635 is a useful device which can be used to control large loads and switching at high frequencies. It can be used in many different applications and is particularly useful for motor-control circuits and high-frequency switching circuits. It is a unipolar voltage-controlled device which operates by creating an electric field which depletes the silicon dioxide layer and allows current to flow between the drain and source.
The specific data is subject to PDF, and the above content is for reference
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IRF6635 Datasheet/PDF