IRF6636

Vgs(th) (Max) @ Id:	2.45V @ 250µA
Package / Case:	DirectFET™ Isometric ST
Supplier Device Package:	DIRECTFET™ ST
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	2.2W (Ta), 42W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2420pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	27nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	4.5 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	18A (Ta), 81A (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRF6636 is a type of metal oxide semiconductor field effect transistor (MOSFET) which is one among many other types of transistors. It has a single vertical gate connected to the source pins that can be used to control its conductivity. This MOSFET is capable of handling large currents up to 60 amps and is commonly used in electronic components such as amplifiers, switches and power supplies.The working principle of the IRF6636 involves the use of electric fields to control the conducting path of electric current. This MOSFET uses a P-channel, meaning that the current is primarily controlled by a positively charged gate, rather than a negatively charged gate like other types of FETs. The IRF6636 also has an N-channel which is generally used only in certain specialized applications such as high-current switching. When the gate is held at a positive voltage level, the MOSFET will be able to conduct electric current through the channel. This can be used to switch on or off the device, depending on the amount of voltage applied to the gate. As the voltage level of the gate is increased, the resistance of the channel will decrease, allowing more electric current to flow. On the other hand, decreasing the voltage will increase the resistance, thus reducing the amount of current that can pass through.The IRF6636 is mostly used for power control applications in consumer electronics due to its ability to switch large currents. It is also used for DC-DC voltage converters, motor drivers and photovoltaic applications. Furthermore, the IRF6636 is very popular in motor control applications as it can be switched at very high frequency rates, allowing high speed switching and better torque accuracy.The IRF6636 can also be used in audio amplifier and switching applications. Its low power gate drive, relatively low signal path impedance and high current density make it well suited for these tasks. This MOSFET can also be used in mixing and matching applications where a high current is required while still being able to maintain a low standby power consumption.The IRF6636 is a versatile MOSFET as it can be used in a wide variety of applications. Its high current handling capability and low gate drive requirement makes it ideal for switching and power control tasks in consumer electronics. It can also be utilized in audio and mixing applications, thanks to its low signal path impedance and high current density. Its ability to switch at high frequency rates makes it capable of motor control tasks at high speeds and greater torque accuracy.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description