| Allicdata Part #: | IRF6644-ND |
| Manufacturer Part#: |
IRF6644 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 100V DIRECTFET-MN |
| More Detail: | N-Channel 100V 10.3A (Ta), 60A (Tc) 2.8W (Ta), 89W... |
| DataSheet: | IRF6644 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4.8V @ 150µA |
| Package / Case: | DirectFET™ Isometric MN |
| Supplier Device Package: | DIRECTFET™ MN |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.8W (Ta), 89W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2210pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 13 mOhm @ 10.3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 10.3A (Ta), 60A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRF6644 is a femtoFET from International Rectifier, typically with a drain-source breakdown voltage (BVDSS) of 40 volts and a nominal drain current of 10 amps. It is a depletion-mode, N-channel MOSFET (metal–oxide–semiconductor field-effect transistor). IRF6644 is found in a wide variety of electronic applications, particularly in power switching circuits, such as motor control, power converters, and power conversion modules.
The IRF6644 works on a structure of three terminals; source, drain, and gate. The source and drain are commonly referred to as the “current carrying terminals”, while the gate is the control terminal. The MOSFET is a voltage-controlled device, so the voltage applied to the gate controls the current flow through the MOSFET. When the gate-source voltage is below the threshold voltage (Vgs(th)), the device is in an ‘off’ state. When the gate-source voltage is above the threshold voltage, the device is in an ‘on’ state, and the current flowing from source to drain depends on the Vgs.
The IRF6644 is used in high power applications where a MOSFET is needed to efficiently switch high amounts of power. Its combination of low gate charge and low Rds(on) make it well-suited for applications in the automotive and hybrid electric vehicles (HEV) markets. Additionally, its high surge rating makes it a good choice for DC-AC inverter applications.The IRF6644 can also be used in high-frequency switching applications, such as switching supplies and DC/DC converters. Its low gate charge and low on-resistance allow it to switch heavy loads quickly with minimal switching losses. Additionally, its low capacitance and low gate resistance make it well-suited for high-frequency switching applications.The IRF6644 is also well-suited for power load switching applications, such as motor control and bridge rectifiers. Its low Rds(on) and low gate charge allow it to switch heavy loads efficiently with minimal power losses. Additionally, its high surge rating makes it a good choice for applications where large inrush currents occur.
In conclusion, the IRF6644 is a versatile MOSFET with a wide range of applications. It is well-suited for power switching, DC/AC inverters, high-frequency switching, and power load switching applications. Its combination of low gate charge and low on-resistance make it ideal for automotive and HEV applications. Additionally, its high surge rating allows it to handle large inrush currents.
The specific data is subject to PDF, and the above content is for reference
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IRF6644 Datasheet/PDF