| Allicdata Part #: | IRF6646TRPBFTR-ND |
| Manufacturer Part#: |
IRF6646TRPBF |
| Price: | $ 0.78 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 80V 12A DIRECTFET |
| More Detail: | N-Channel 80V 12A (Ta), 68A (Tc) 2.8W (Ta), 89W (T... |
| DataSheet: | IRF6646TRPBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.78000 |
| 10 +: | $ 0.75660 |
| 100 +: | $ 0.74100 |
| 1000 +: | $ 0.72540 |
| 10000 +: | $ 0.70200 |
| Vgs(th) (Max) @ Id: | 4.9V @ 150µA |
| Package / Case: | DirectFET™ Isometric MN |
| Supplier Device Package: | DIRECTFET™ MN |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.8W (Ta), 89W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2060pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 12A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Ta), 68A (Tc) |
| Drain to Source Voltage (Vdss): | 80V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IRF6646TRPBF Application Field and Working Principle
IRF6646TRPBF is a type of high power MOSFET transistor N-channel enhancement mode, which can provide a small junction capacitance and low internal noise. It is designed to be used in low voltage and power applications, such as TV tuners, DVD players, power amplifiers, automotive and industrial products, as well as in home and portable electronics.
The device consists of a P-type and an N-type channel separated by a gate oxide layer, which is resistant to electrical fields and thus prevents current from flowing between the channels. This characteristic is known as the MOSFET’s voltage-dependent resistivity (VDR). In the IRF6646TRPBF, when a certain voltage level is applied to the gate of the device, a large enough electric field will be obtained to produce a strong enough force that will turn on the device and thus allow conduction to occur.
Once conduction occurs, the device functions as a resistor and current will flow between the drain and the source. The resistance of the device is determined by the gate-to-drain voltage, which is known as the ‘gate voltage’. The higher the gate voltage, the higher the drain current; the lower the gate voltage, the lower the drain current.
Since the threshold voltage and the gate-to-drain voltage (VGS) or the resistance of the device is adjustable, the device can be used in different types of applications such as switching, triggering, amplifying and voltage regulation. When used in a switching application, the device is used to turn a load on and off quickly; when used in a triggering application, the device is used to tell the load when to turn on and off. In amplifying applications, the device is used to increase the current and voltage that are sent to the load, while in voltage regulation applications, the device is used to control and mitigate the amount of current and voltage moving to the load.
The IRF6646TRPBF is designed to have a low RDS (ON) value, which helps to reduce the conduction losses of the device and aid in heat dissipation. The device also has an extended lifetime and can withstand a wide range of junction temperatures. Its avalanche capability also allows for the device to handle much higher frequencies and larger voltages than standard devices. This makes it suitable for applications with high power requirements, such as wireless base stations.
The IRF6646TRPBF is a versatile device that can be used in a variety of applications. From providing consistent performance in a high-performance system to providing better power efficiency for lower power systems, it is an ideal choice for many applications. With its high power, low on-resistance, extended lifetime, avalanche capability, and low noise, it is an essential component for many applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| IRF6802SDTRPBF | Infineon Tec... | -- | 1000 | MOSFET 2N-CH 25V 16A SAMo... |
| IRF640SPBF | Vishay Silic... | -- | 1374 | MOSFET N-CH 200V 18A D2PA... |
| IRF6655TR1PBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 4.2A DIR... |
| IRF6797MTR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 36A DIREC... |
| IRF6795MTR1PBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 32A DIREC... |
| IRF60DM206 | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 130AN-Cha... |
| IRF644NS | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 250V 14A D2PA... |
| IRF6645TRPBF | Infineon Tec... | -- | 24000 | MOSFET N-CH 100V 5.7A DIR... |
| IRF630NS | Infineon Tec... | -- | 1000 | MOSFET N-CH 200V 9.3A D2P... |
| IRF6616TR1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 19A DIREC... |
| IRF640NL | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 200V 18A TO-2... |
| IRF6644TR1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V DIRECTFE... |
| IRF6894MTRPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 32A DIREC... |
| IRF630STRLPBF | Vishay Silic... | 0.69 $ | 1000 | MOSFET N-CH 200V 9A D2PAK... |
| IRF6706S2TRPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V DIRECTFET... |
| IRF6628TR1PBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 27A DIREC... |
| IRF6717MTR1PBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 38A DIREC... |
| IRF624 | Vishay Silic... | -- | 1000 | MOSFET N-CH 250V 4.4A TO-... |
| IRF6607 | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 27A DIREC... |
| IRF6722STRPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 13A DIREC... |
| IRF6722MTR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 13A DIREC... |
| IRF6620TRPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 20V 27A DIREC... |
| IRF6610TR1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 20V 15A DIREC... |
| IRF610PBF | Vishay Silic... | -- | 6320 | MOSFET N-CH 200V 3.3A TO-... |
| IRF6620TR1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 20V 27A DIREC... |
| IRF634SPBF | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 250V 8.1A D2P... |
| IRF620PBF | Vishay Silic... | -- | 713 | MOSFET N-CH 200V 5.2A TO-... |
| IRF640STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 200V 18A D2PA... |
| IRF624SPBF | Vishay Silic... | -- | 1594 | MOSFET N-CH 250V 4.4A D2P... |
| IRF6712STR1PBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 17A DIREC... |
| IRF6609TR1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 20V 31A DIREC... |
| IRF6631TR1PBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 13A DIREC... |
| IRF6665TR1PBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 4.2A DIR... |
| IRF634 | STMicroelect... | -- | 1000 | MOSFET N-CH 250V 8A TO-22... |
| IRF6678TR1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 30A DIREC... |
| IRF6614TRPBF | Infineon Tec... | -- | 4200 | MOSFET N-CH 40V 12.7A DIR... |
| IRF610SPBF | Vishay Silic... | -- | 635 | MOSFET N-CH 200V 3.3A D2P... |
| IRF6665 | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V DIRECTFE... |
| IRF634STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 250V 8.1A D2P... |
| IRF6718L2TR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 61A DIREC... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...
IRF6646TRPBF Datasheet/PDF