IRF6646TRPBF Allicdata Electronics
Allicdata Part #:

IRF6646TRPBFTR-ND

Manufacturer Part#:

IRF6646TRPBF

Price: $ 0.78
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 80V 12A DIRECTFET
More Detail: N-Channel 80V 12A (Ta), 68A (Tc) 2.8W (Ta), 89W (T...
DataSheet: IRF6646TRPBF datasheetIRF6646TRPBF Datasheet/PDF
Quantity: 1000
1 +: $ 0.78000
10 +: $ 0.75660
100 +: $ 0.74100
1000 +: $ 0.72540
10000 +: $ 0.70200
Stock 1000Can Ship Immediately
$ 0.78
Specifications
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Package / Case: DirectFET™ Isometric MN
Supplier Device Package: DIRECTFET™ MN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 68A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRF6646TRPBF Application Field and Working Principle

IRF6646TRPBF is a type of high power MOSFET transistor N-channel enhancement mode, which can provide a small junction capacitance and low internal noise. It is designed to be used in low voltage and power applications, such as TV tuners, DVD players, power amplifiers, automotive and industrial products, as well as in home and portable electronics.

The device consists of a P-type and an N-type channel separated by a gate oxide layer, which is resistant to electrical fields and thus prevents current from flowing between the channels. This characteristic is known as the MOSFET’s voltage-dependent resistivity (VDR). In the IRF6646TRPBF, when a certain voltage level is applied to the gate of the device, a large enough electric field will be obtained to produce a strong enough force that will turn on the device and thus allow conduction to occur.

Once conduction occurs, the device functions as a resistor and current will flow between the drain and the source. The resistance of the device is determined by the gate-to-drain voltage, which is known as the ‘gate voltage’. The higher the gate voltage, the higher the drain current; the lower the gate voltage, the lower the drain current.

Since the threshold voltage and the gate-to-drain voltage (VGS) or the resistance of the device is adjustable, the device can be used in different types of applications such as switching, triggering, amplifying and voltage regulation. When used in a switching application, the device is used to turn a load on and off quickly; when used in a triggering application, the device is used to tell the load when to turn on and off. In amplifying applications, the device is used to increase the current and voltage that are sent to the load, while in voltage regulation applications, the device is used to control and mitigate the amount of current and voltage moving to the load.

The IRF6646TRPBF is designed to have a low RDS (ON) value, which helps to reduce the conduction losses of the device and aid in heat dissipation. The device also has an extended lifetime and can withstand a wide range of junction temperatures. Its avalanche capability also allows for the device to handle much higher frequencies and larger voltages than standard devices. This makes it suitable for applications with high power requirements, such as wireless base stations.

The IRF6646TRPBF is a versatile device that can be used in a variety of applications. From providing consistent performance in a high-performance system to providing better power efficiency for lower power systems, it is an ideal choice for many applications. With its high power, low on-resistance, extended lifetime, avalanche capability, and low noise, it is an essential component for many applications.

The specific data is subject to PDF, and the above content is for reference

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