IRF6668TRPBF Allicdata Electronics

IRF6668TRPBF Discrete Semiconductor Products

Allicdata Part #:

IRF6668TRPBFTR-ND

Manufacturer Part#:

IRF6668TRPBF

Price: $ 0.54
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 80V 55A DIRECTFET
More Detail: N-Channel 80V 55A (Tc) 2.8W (Ta), 89W (Tc) Surface...
DataSheet: IRF6668TRPBF datasheetIRF6668TRPBF Datasheet/PDF
Quantity: 1000
1 +: $ 0.54000
10 +: $ 0.52380
100 +: $ 0.51300
1000 +: $ 0.50220
10000 +: $ 0.48600
Stock 1000Can Ship Immediately
$ 0.54
Specifications
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Package / Case: DirectFET™ Isometric MZ
Supplier Device Package: DIRECTFET™ MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 15 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IRF6668TRPBF is a single, high-power FET (Field Effect Transistor) that is typically used as a power switch in various types of electronic applications. Its advantage over regular transistors is that it has a higher current rating, meaning it can handle more current. Additionally, it has a very low on-resistance (Rds) and thus, can be used as a power switch at very high frequencies. The IRF6668TRPBF has a range voltage rating of 4V to 100V which allows it to be used in a wide range of applications. Moreover, its peak output power of 350W and maximum drain current of 59A make it an excellent choice for power switching in many types of electronic devices. In this article, we will discuss the application fields and working principle of the IRF6668TRPBF.

The IRF6668TRPBF is mainly used in power, switching and motor control circuits. It is commonly used in modern electronic products like laptops, PCs, cell phones, cameras and video game consoles. Moreover, it is also used in appliances like power amplifiers, LED drivers, and audio amplifiers. Additionally, the IRF6668TRPBF is used in industrial applications such as robotics, servo motors, motor drives, AC motor starters and traction motor controllers. Additionally, it is used in automotive applications such as DC motor starters, active suspensions and electric vehicle motor inverters.

The working principle of the IRF6668TRPBF is similar to that of any other power transistor. It uses the properties of the P-channel MOSFET to allow current to pass through its drain and source pins when the gate pin is activated. When the gate voltage is applied, it creates an electric field that forms a channel in between the drain and the source of the FET. As a result, current can pass through the FET from the drain to the source. When the gate voltage is removed, the electric field collapses and the channel no longer exists, thereby preventing current from passing through.

The IRF6668TRPBF also has a lower gate capacitance than other MOSFETs, which makes it ideal for high frequency switching applications. Additionally, its low gate charge allows it to be easily switched at high frequencies without suffering from excess heat generation. This makes it an attractive choice for power switching applications such as motor drives, LED drivers, and power amplifiers.

In summary, the IRF6668TRPBF is a single, high-power FET that is commonly used in a wide range of applications. Its high current rating, low on-resistance, and low gate capacitance make it an attractive choice for power switching applications such as laptops, PCs, cell phones, cameras, video game consoles, and industrial applications. Additionally, its relatively low gate charge also make it an ideal choice for high frequency switching. Therefore, the IRF6668TRPBF is an excellent choice for a wide variety of electronic applications.

The specific data is subject to PDF, and the above content is for reference

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