IRF6721STRPBF Allicdata Electronics
Allicdata Part #:

IRF6721STRPBFTR-ND

Manufacturer Part#:

IRF6721STRPBF

Price: $ 0.35
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 14A DIRECTFET
More Detail: N-Channel 30V 14A (Ta), 60A (Tc) 2.2W (Ta), 42W (T...
DataSheet: IRF6721STRPBF datasheetIRF6721STRPBF Datasheet/PDF
Quantity: 1000
1 +: $ 0.35000
10 +: $ 0.33950
100 +: $ 0.33250
1000 +: $ 0.32550
10000 +: $ 0.31500
Stock 1000Can Ship Immediately
$ 0.35
Specifications
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Package / Case: DirectFET™ Isometric SQ
Supplier Device Package: DIRECTFET™ SQ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IRF6721STRPBF is an advanced single high side N-channel MOSFET that offers improved performance in both standard and low current applications. It is often used in the field of power switching, such as DC-DC converters, power electronics, and automotive applications. This MOSFET is highly efficient and has excellent thermal performance, ensuring reliability and longevity of applications. It is a very popular device used by many manufacturers and hobbyists alike.

The device is made of an N-type silicon material to form the substrate. To achieve the desired drain and source connections, the device utilizes a P-type diffused well for the drain and a P-type layer for the source. To provide the desired high switching speed, the device utilizes a Metal-Oxide Semiconductor field-effect transistor (MOSFET) technology. The device also has a low drive voltage, making it easier to implement in various systems.

The IRF6721STRPBF is a an ideal switch for driving capacitive and inductive loads, such as motors, solenoids, and relays. It is robust enough to handle the high inrush currents and frequent switching that these types of loads require. Additionally, it operates in both full bridge topologies and half bridge topologies, making it suitable for both classic and push-pull configurations.

When it comes to the actual operating principle of this MOSFET, it is quite straightforward. When the gate voltage of the device is applied with the desired voltage, a channel of electrons will form between the source and drain, creating a conducting path. This conduction is what allows the current to flow between the source and drain, allowing for switching operations.

The IRF6721STRPBF\'s wide current bandwidth prevents excessive switching losses and decreases power consumption. Its low on-resistance offers improved efficiency and the reduced gate charge improves switching speed, reducing the device\'s overall power consumption. Additionally, the device\'s high power dissipation enables a longer operating life and its fast switching time results in less wasted energy.

The IRF6721STRPBF is an ideal device for applications that require high current or high switching speed, such as in automotive components, DC/DC converters, and solar inverters. It is one of the most reliable, efficient, and cost-effective solutions available in the market. It has been proven to be an effective solution in many types of applications and continues to be an industry favorite.

The specific data is subject to PDF, and the above content is for reference

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