| Allicdata Part #: | IRF6894MTR1PBFTR-ND |
| Manufacturer Part#: |
IRF6894MTR1PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 25V 32A DIRECTFET |
| More Detail: | N-Channel 25V 32A (Ta), 160A (Tc) 2.1W (Ta), 54W (... |
| DataSheet: | IRF6894MTR1PBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2.1V @ 100µA |
| Package / Case: | DirectFET™ Isometric MX |
| Supplier Device Package: | DIRECTFET™ MX |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.1W (Ta), 54W (Tc) |
| FET Feature: | Schottky Diode (Body) |
| Input Capacitance (Ciss) (Max) @ Vds: | 4160pF @ 13V |
| Vgs (Max): | ±16V |
| Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 1.3 mOhm @ 33A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 32A (Ta), 160A (Tc) |
| Drain to Source Voltage (Vdss): | 25V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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A field effect transistor (or FET) is a type of transistor that can be used to control the flow of electrical current in a circuit. The IRF6894MTR1PBF is a P-channel Metal–Oxide–Semiconductor FET, or MOSFET, which is one of the most popular types of FETs. This particular device is a single, normally-off type MOSFET, meaning that when a small input voltage is applied, it will switch on and allow current to flow through the device.
In order to understand the working principle of a MOSFET, it is important to understand what a P-channel and N-channel MOSFET is. A P-channel MOSFET has a P-type layer of silicon connected to the source, gate, and drain. When a positive voltage (Vgs) is applied to the gate of the MOSFET, the channel between the source and drain is opened up and electrons flow from the source to the drain. This is the essence of how a P-channel MOSFET works.
The IRF6894MTR1PBF is a special type of single, normally-off P-channel MOSFET. This device features a maximum drain-to-source voltage of 30 volts and a maximum drain current of 11 amps with a maximum power dissipation of 73.4 watts. It also has an on-resistance of 0.190 ohms, which is much lower than typical MOSFETs of similar size and power consumption.
The IRF6894MTR1PBF is often used for a variety of applications including motor control, power inverters, overheating protection circuits, switching circuits, high-efficiency converters, and in power management systems. This device can be useful for a variety of systems and applications where efficient switching and power management are required.
In addition to its applications, the IRF6894MTR1PBF offers a variety of other benefits as well. This device features very low on-resistance, which makes it more energy efficient than many other MOSFETs. It also features an integrated ESD protection diode, which prevents damage in the event of an ESD event. Furthermore, this device offers an extended service life due to the use of high-quality silicon material, which minimizes wear-out and maximizes reliability.
In conclusion, the IRF6894MTR1PBF is a single, normally-off P-channel MOSFET which offers a variety of benefits and applications. Its low on-resistance and integrated ESD protection diode make it a popular choice for motor control, power inverters, overheating protection circuits, switching circuits, high-efficiency converters, and in power management systems. This device offers users an energy-efficient solution that is reliable and durable.
The specific data is subject to PDF, and the above content is for reference
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IRF6894MTR1PBF Datasheet/PDF