IRF6894MTR1PBF Allicdata Electronics
Allicdata Part #:

IRF6894MTR1PBFTR-ND

Manufacturer Part#:

IRF6894MTR1PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 25V 32A DIRECTFET
More Detail: N-Channel 25V 32A (Ta), 160A (Tc) 2.1W (Ta), 54W (...
DataSheet: IRF6894MTR1PBF datasheetIRF6894MTR1PBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Package / Case: DirectFET™ Isometric MX
Supplier Device Package: DIRECTFET™ MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 2.1W (Ta), 54W (Tc)
FET Feature: Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds: 4160pF @ 13V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 33A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 160A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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A field effect transistor (or FET) is a type of transistor that can be used to control the flow of electrical current in a circuit. The IRF6894MTR1PBF is a P-channel Metal–Oxide–Semiconductor FET, or MOSFET, which is one of the most popular types of FETs. This particular device is a single, normally-off type MOSFET, meaning that when a small input voltage is applied, it will switch on and allow current to flow through the device.

In order to understand the working principle of a MOSFET, it is important to understand what a P-channel and N-channel MOSFET is. A P-channel MOSFET has a P-type layer of silicon connected to the source, gate, and drain. When a positive voltage (Vgs) is applied to the gate of the MOSFET, the channel between the source and drain is opened up and electrons flow from the source to the drain. This is the essence of how a P-channel MOSFET works.

The IRF6894MTR1PBF is a special type of single, normally-off P-channel MOSFET. This device features a maximum drain-to-source voltage of 30 volts and a maximum drain current of 11 amps with a maximum power dissipation of 73.4 watts. It also has an on-resistance of 0.190 ohms, which is much lower than typical MOSFETs of similar size and power consumption.

The IRF6894MTR1PBF is often used for a variety of applications including motor control, power inverters, overheating protection circuits, switching circuits, high-efficiency converters, and in power management systems. This device can be useful for a variety of systems and applications where efficient switching and power management are required.

In addition to its applications, the IRF6894MTR1PBF offers a variety of other benefits as well. This device features very low on-resistance, which makes it more energy efficient than many other MOSFETs. It also features an integrated ESD protection diode, which prevents damage in the event of an ESD event. Furthermore, this device offers an extended service life due to the use of high-quality silicon material, which minimizes wear-out and maximizes reliability.

In conclusion, the IRF6894MTR1PBF is a single, normally-off P-channel MOSFET which offers a variety of benefits and applications. Its low on-resistance and integrated ESD protection diode make it a popular choice for motor control, power inverters, overheating protection circuits, switching circuits, high-efficiency converters, and in power management systems. This device offers users an energy-efficient solution that is reliable and durable.

The specific data is subject to PDF, and the above content is for reference

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