![IRF710S Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | IRF710S-ND |
Manufacturer Part#: |
IRF710S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 400V 2A D2PAK |
More Detail: | N-Channel 400V 2A (Tc) 3.1W (Ta), 36W (Tc) Surface... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 36W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 170pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.6 Ohm @ 1.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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A FET (Field Effect Transistor), also known as a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), is a type of transistor that is used in a variety of applications. The IRF710S is one example of a FET, and it has many features that make it well-suited for a variety of tasks. In this article, we\'ll explore the application field and working principle of the IRF710S.
First and foremost, it\'s important to understand what a FET is and how it works. Simply put, FETs are three-terminal devices that utilize a voltage or electrical current to modulate the conductance between two terminals (the source and drain) in a controlled way. This process is referred to as "field effect control," and it gives FETs their "field effect" moniker. The third terminal of the FET is called the gate, and its applied voltage is what controls the current flowing between the source and drain terminals.
The IRF710S is a specific type of FET, known as an enhancement mode MOSFET, meaning it has a P-channel. The P-channel carries current from the source to the drain, so when the gate voltage is at the threshold voltage, the P-channel is open and the flow is from source to drain. As the gate voltage increases, the P-channel increases, allowing more current flow. The IRF710S also features a breakdown voltage of 800V and a maximum current of 2A.
So, where is the IRF710S used? It has a wide range of applications and has been used in several high-voltage switching applications, such as power supplies and DC-DC converters. It has also been used in communication systems, as it can modulate and amplify high-frequency signals. Additionally, the IRF710S has been used in the automotive industry, as a switch to control high-power auxiliary circuits. The IRF710S is also used in applications where high current is needed, such as motor control, inertial navigation, and battery charging.
So, how does the IRF710S actually work? In brief, when voltage is applied to the gate terminal, the field effect opens and allows the current to flow from source to drain. Conversely, when the voltage is taken away from the gate, the field effect is closed and current does not flow. This is called "enhancement," as the transistor needs an external voltage to turn "on," or start conducting. It can also be used in "depletion mode," where the transistor needs to have the external voltage taken away to turn "off," or stop conducting.
In summary, the IRF710S is a versatile FET that is well-suited for a variety of applications. Its features make it particularly suitable for high-voltage switching applications and communication systems, as well as motor control and battery charging applications. Its field effect control allows it to be easily turned on and off based on the gate voltage, making it a highly effective and reliable device.
The specific data is subject to PDF, and the above content is for reference
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