IRF710STRL Allicdata Electronics
Allicdata Part #:

IRF710STRL-ND

Manufacturer Part#:

IRF710STRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 400V 2A D2PAK
More Detail: N-Channel 400V 2A (Tc) 3.1W (Ta), 36W (Tc) Surface...
DataSheet: IRF710STRL datasheetIRF710STRL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRF710STRL is a MOSFET (metal-oxide-semiconductor field-effect transistor) integrated circuit specifically designed for switching applications. It is most commonly used in high-current, high-voltage power conversion and control circuits, including switching power supplies, motor controllers, as well as in motor drives. It is an excellent choice for low-noise, high-efficiency power conversion due to its relatively low-dissipation characteristics.

The IRF710STRL is a single depletion-mode MOSFET. That is, it has a source-drain voltage of zero, with the source and drain connected together. It is capable of producing very large amounts of current, making it suitable for high-power transmission and switching applications. As a result, it has become a popular choice in the design of power conversion and control circuits.

The IRF710STRL is a relatively simple circuit. It is composed of several transistors, as well as a few resistors, a capacitor and an inductor. These components are connected together to create a switched electric circuit, which is capable of rapidly switching high current on and off. All of the components are connected in series, and a single gate voltage is used to control the switching of the circuit.

The gate voltage is typically applied to the gate of the MOSFET. When the MOSFET is turned on, the resistor between the source and the gate will drop the voltage of the gate, allowing current to flow from the source to the drain. Conversely, when the gate voltage is removed, the resistor will raise the gate voltage, turning off the MOSFET and preventing current from flowing from the source to the drain.

The IRF710STRL is capable of operating at high speeds and conducting high currents. As a result, it is often used in high-frequency switching circuits, such as in motor controllers and other high-current, high-voltage switching circuits. It is also a popular choice for low-noise, high-efficiency power conversion and can serve as a good alternative to BJTs (bipolar junction transistors) in many applications.

The IRF710STRL can also be used in high-power, low-voltage applications. Its small die and low on-resistance makes it an appealing choice for use in low-voltage power supplies. Its low-dissipation characteristics allows it to perform well in a wide range of applications.

In conclusion, the IRF710STRL is a MOSFET integrated circuit specifically designed for switching applications. It is a single depletion-mode MOSFET, capable of producing very large amounts of current, making it suitable for high-power transmission and switching applications. It is a popular choice for high-current, high-voltage power conversion and control circuits, low-noise, high-efficiency power conversion, and high-power, low-voltage applications.

The specific data is subject to PDF, and the above content is for reference

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