Allicdata Part #: | IRF710STRLPBF-ND |
Manufacturer Part#: |
IRF710STRLPBF |
Price: | $ 0.69 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 400V 2A D2PAK |
More Detail: | N-Channel 400V 2A (Tc) 3.1W (Ta), 36W (Tc) Surface... |
DataSheet: | IRF710STRLPBF Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 0.61700 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 36W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 170pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.6 Ohm @ 1.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRF710STRLPBF is a type of transistor, known as a Field-Effect Transistor (FET). It belongs to a family known as Insulated-Gate FETs (IGFETs) in which the gate electrode is insulated from the conducting channel when rated voltages are applied across it. The IRF710STRLPBF is a single MOSFET which is used mainly in switching and power management applications. The IRF type is a P-channel MOSFET which offers low-signal switching and lower On-state Resistance than its N-channel counterparts.
The IRF710STRLPBF is mainly used in low voltage, low power applications such as switching power supplies, relays and optocouplers. It is also used in high-speed logic circuits and analog switches. The IRF710STRLPBF has a maximum drain-source voltage of 50V and a drain-source current of 5.2A which make it suitable for a variety of power management applications. It also has a fast switching speed which makes it useful for high-speed circuit designs.
The IRF710STRLPBF can operate in either depletion or enhancement mode, depending on how the voltage is applied across it. In depletion mode, current flows through the device when the gate-source voltage is positive and decreases when the gate-source voltage is negative. In enhancement mode, current flows through the device when the gate-source voltage is negative and increases when the gate-source voltage is positive.
The IRF710STRLPBF is not limited to use in the above cases, it can be used in many other applications including voltage regulators, switching converters, signal processing and signal conditioning circuits. The IRF710STRLPBF is a reliable, efficient and cost-effective solution for many power management and high-speed logic circuit designs.
The IRF710STRLPBF works by using a gate voltage to control the flow of current through the device. When the gate voltage is applied, it changes the characteristics of the device and allows current to flow between the source and drain. Current is then diverted from the source to the drain depending on the magnitude of the applied gate voltage. This allows the IRF710STRLPBF to be used as a switch, amplifying device or regulator.
The IRF710STRLPBF can be used in both high and low voltage applications. It is useful for switching low voltage DC and AC signals, as well as for switching high voltage AC signals. The IRF710STRLPBF has a maximum gate-source voltage of ±25V and a maximum drain-source voltage of ±50V, making it suitable for a wide range of power management applications.
In summary, IRF710STRLPBF is a single MOSFET transistor used mainly in low voltage, low power and high-speed applications. The device operates in either depletion or enhancement mode and offers reliable, efficient and cost-effective solutions for many power management and high-speed logic circuit designs. It has a maximum drain-source voltage of 50V and a maximum gate-source voltage of ±25V which make it suitable for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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