IRF7201TR Allicdata Electronics
Allicdata Part #:

IRF7201TR-ND

Manufacturer Part#:

IRF7201TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 7.3A 8-SOIC
More Detail: N-Channel 30V 7.3A (Tc) 2.5W (Tc) Surface Mount 8-...
DataSheet: IRF7201TR datasheetIRF7201TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRF7201TR is an enhancement-mode power field-effect transistor (FET) module from Infineon technologies. It is designed for flexible and reliable applications in power converters, making it suitable for power management systems such as air conditioners, electric vehicles and battery chargers.

The IRF7201TR has a extremely high power density and is designed for use in an high-temperature environment, up to 175°C. It was made specifically to reduce power losses, extend device lifetime and increase power system reliability.

The IRF7201TR module is composed of two N-channel power MOSFETs in an encapsulated plastic enclosure with two integrated source-drain resistors to provide parasitic oscillation damping. The module is capable of providing superior RDS(ON) performance, fast operation and high input impedance.

When it comes to operation principle, the IRF7201TR module is a versatile enhancement-mode FET regulated by its gate voltage. The module has an on-state resistance between drain and source, otherwise known as RDS(ON), which is reduced by increasing the gate voltage. The higher RDS(ON) lowers switching and conduction losses, which in turn increases system efficiency.

The IRF7201TR module is designed to provide flexibility for power converters operating in half-bridge topology. Half-bridge topology is a commonly used configuration for AC-DC or DC-DC converters in which one device is responsible for the positive voltage and the other is responsible for the negative voltage. As IRF7201TR module includes two MOSFETs, the use of this module allows for the two devices to be included within a single package, providing superior performance in a compact form factor.

IRF7201TR also features advanced features, such as fast and integrated thermal shut-down protection which helps protect the module from damaging temperatures, as well as current sense capability that allows for monitoring of the two MOSFETs currents. This module also includes advanced protection functions such as over-voltage protection and over-current protection, which helps protect the module from potentially damaging conditions.

IRF7201TR is a cost-effective module for high-power and high-temperature applications in a variety of industries. With its integrated and advanced features, this module provides superior performance, improved system efficiency and increased system reliability.

The specific data is subject to PDF, and the above content is for reference

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