IRF7204PBF Allicdata Electronics
Allicdata Part #:

IRF7204PBF-ND

Manufacturer Part#:

IRF7204PBF

Price: $ 0.71
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 20V 5.3A 8-SOIC
More Detail: P-Channel 20V 5.3A (Ta) 2.5W (Tc) Surface Mount 8-...
DataSheet: IRF7204PBF datasheetIRF7204PBF Datasheet/PDF
Quantity: 3551
1 +: $ 0.71000
10 +: $ 0.68870
100 +: $ 0.67450
1000 +: $ 0.66030
10000 +: $ 0.63900
Stock 3551Can Ship Immediately
$ 0.71
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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Transistors are among the most important devices used in modern electronics. In particular, field-effect transistors (FETs) provide state-of-the-art switching, amplification, and signal-processing capabilities. The IRF7204PBF is one such FET that is designed specifically for use in high-frequency, low-power applications. It is a single N-channel MOSFET capable of operating at voltages ranging from 4.5 to 20 volts, and power levels up to 1.7 watts. In this article, we will discuss the details of the IRF7204PBF and its applications in various fields of electronics.

IRF7204PBF Device Overview

The IRF7204PBF is a small-sized single N-channel enhancement-mode MOSFET. The chip measures in at 5x6x4mm and is ideal for applications in which space is at a premium. It has an R\ds(on) on resistance of 7.2Ω and a maximum current handling of 1.7A. The gate-source threshold voltage is 4V and the drain breakdown voltage is rated at 20V. iRadiant power dissipation (PD) is rated at 1.7W, with maximum junction temperature rated at 150°C. The IRF7204PBF also features a fast switching speed of 175ns and a low input capacitance of 16pF.

IRF7204PBF Working Principle

The IRF7204PBF is an N-channel MOSFET and as such works on the principle of voltage controlled current Regulation. When a positive All source voltage is applied to the gate of the MOSFET, the electrons in the channel are attracted to the gate and this causes the resistance of the channel to be reduced. As the resistance of the channel is reduced, more current is allowed to flow through it. When the gate voltage is increased, more electrons are attracted to the gate and more current is allowed to flow through the channel, thus achieving an effective current regulation.

IRF7204PBF Applications

The IRF7204PBF is suitable for a wide range of applications due to its low on-resistance, fast switching speed, and high power dissipation. Its low on-resistance makes it ideal for use in power supplies as well as high current as in switching circuits. Its fast switching speed makes it suitable for use in high-frequency circuits such as communications for high speed data transfers. In addition, its high power dissipation makes it an ideal choice for power amplifier circuits. Furthermore, it is a robust device that is capable of operating at high temperatures and in extreme environments.

In addition, its small size makes it suitable for applications in which space is at a premium such as portable medical devices or automotive electronics. Its low gate-source threshold voltage makes it suitable for use in low voltage logic circuits such as logic level shifters and logic gates. In addition, its high current handling capability makes it suitable for use in high current circuits such as motor control and solenoid control.

Overall, the IRF7204PBF is a versatile device that can be used in a wide range of applications. Its low on-resistance, fast switching speed, and high power dissipation make it an ideal choice for high-frequency, low-power applications.

The specific data is subject to PDF, and the above content is for reference

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