IRF720STRR Allicdata Electronics
Allicdata Part #:

IRF720STRR-ND

Manufacturer Part#:

IRF720STRR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 400V 3.3A D2PAK
More Detail: N-Channel 400V 3.3A (Tc) 3.1W (Ta), 50W (Tc) Surfa...
DataSheet: IRF720STRR datasheetIRF720STRR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRF720STRR is a MOSFET transistor that is produced by International Rectifier’s Discrete Power Mosfet family. It is a two terminal device that is used for switch mode and other applications. This MOSFET has an acceptable on-state resistance which is the reason why it has been used in several industries. It is mostly used to pass a significant current while maintaining a relatively low on-state resistance.

The IRF720STRR has a voltage drain to source rating of 100v and a drain current of 20.63A. This MOSFET has a total gate charge of 230nC, 24mΩ on-state resistance and 18mΩ Rds(on). This MOSFET can also handle peak load current of 11.135A, which is perfect for switch mode applications.

Application Field:

The IRF720STRR MOSFET is suited for switch mode applications. Such applications include motor control, DC-DC converters, etc. This MOSFET also finds application in automotive applications as it can handle high temperatures up to 175°C. It is also used in power management solutions in consumer electronics.

Working Principle:

The IRF720STRR is a metal oxide semiconductor field-effect transistor (MOSFET). In the MOSFET the gate terminal acts as a controlling electrode that is responsible for controlling the flow of electrons between the source and drain terminals. When gate voltage is applied between the gate and source, electrons flow through the device in a channel that is formed between the source and drain.

When a voltage is applied to the gate, the gate responds by creating an electric field that attracts electrons in the channel. This flow of electrons, controlled by the gate, is what gives the MOSFET its power. When the voltage between the gate and source is reduced, the number of electrons in the channel decreases and the amount of current, which can flow between the source and drain decreases. The IRF720STRR has low Rds(on) which makes it suitable for switch mode applications.

Conclusion:

The IRF720STRR MOSFET is a two terminal device which is widely used for switch mode applications such as motor control and DC-DC converters. This MOSFET has a voltage drain to source rating of 100v, drain current of 20.63A, gate charge of 230nC, on-state resistance of 24mΩ and peak load current of 11.135A. It is a metal oxide semiconductor field-effect transistor which is responsible for controlling the flow of electrons between the source and drain terminals.

The specific data is subject to PDF, and the above content is for reference

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