
Allicdata Part #: | IRF7220PBFTR-ND |
Manufacturer Part#: |
IRF7220TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 14V 11A 8-SOIC |
More Detail: | P-Channel 14V 11A (Ta) 2.5W (Ta) Surface Mount 8-S... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 600mV @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8075pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 125nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 11A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drain to Source Voltage (Vdss): | 14V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRF7220TRPBF is a single N-Channel vertical D-MOSFET transistor with a maximum drain current of 55A and a maximum drain-source voltage of 60V, exhibiting positive channel and voltage temperature characteristics. This transistor is widely used in high-power applications such as portable communication electronics, and is a good choice for the portable electronics designer with its low on-state resistance and fast switching speed. This article will explain the application field and working principle of this device.
Application Field:
The IRF7220TRPBF is primarily used in high-efficiency switching applications as well as in electronic controls. It is usually used to control frequencies up to 50kHz, voltage up to 60 volts, and current up to 55A. This vertical D-MOSFET transistor is suitable for a variety of uses such as inverters, motor controllers, solenoids, and relay controls.
Thanks to its low on-state resistance, this device is also suitable for high-current switching applications such as RF (radio frequency) switches, high-power amplifiers, LEDs and other power electronics. In addition, its fast switching speed makes it suitable for applications such as pulse width modulation and waveform generation.
Working Principle:
The IRF7220TRPBF is a vertical D-MOSFET transistor. It consists of two metal-oxide semiconductor layers separated by a thin layer of insulating oxides. When voltage is applied to the gate, a depletion region (or channel) is formed between these two layers, allowing current to flow through the channel when the gate is activated. The current flowing through the channel is controlled by the voltage applied to the gate. When the voltage applied to the gate is low, the current will be low, and when the voltage is high, the current will be high. This transistor can be used for both high-efficiency and high-power switching applications.
The device’s low on-state resistance is due to the fact that the channel is narrow and the depletion layer is thin. This allows more current to flow through the device, meaning that less power is dissipated. It also has a fast switching speed due to its low capacitance. This means that it can switch more quickly between drain-source and source-drain configurations in order to achieve a faster response time for devices such as LEDs and relays.
In conclusion, the IRF7220TRPBF is a single N-channel vertical D-MOSFET transistor that can be used in a variety of applications due to its low on-state resistance and fast switching speed. It is suitable for high efficiency switching, as well as high power applications. This device is widely used in portable communication electronics, inverters, motor controllers, solenoids, and relay controls, amongst other applications.
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