IRF7241TRPBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRF7241TRPBF is a logic level N-channel power MOSFET designed for high-efficiency power switching applications. It is well-suited for a range of power switching applications, including motor and lamp controls, DC/DC converters, load switches and synchronous rectifiers in computer and consumer applications. This MOSFET is available in a Surface Mounted Device (SMD) package, and features a low-resistance silicon level N-channel Metal-Oxide-Silicon Field Effect Transistor (MOSFET) with a low ON-resistance of 0.46 ohms. Additionally, this device features a high surface-mounting breakdown voltage of 800V and a maximum drain-source voltage rating of 300V.

The IRF7241TRPBF is an excellent choice for applications requiring an extremely low threshold voltage (1.5V gate-source voltage) and a low gate charge (9nC). This MOSFET can be used in applications where high frequency switching performance is needed and where power conversion efficiency is of the utmost importance. Additionally, the low gate charge minimizes switching losses and reduces power dissipation. It is also ideal for use in consumer electronics, PCs, telecommunication equipment and other applications.

This MOSFET is a useful device for applications that require an extremely low threshold voltage and a low gate charge. It’s particularly well-suited for switching applications that require an extended switching time and need a high degree of power conversion efficiency, such as DC/DC converters. Additionally, the package size and positive temperature coefficient of the threshold voltage ensure a simple and compact footprint.

The IRF7241TRPBF can be used as a power switch, or as a high-power amplifier in a range of applications. It can also be used as a synchronous rectifier in a DC/DC converter to provide high efficiency. The high switching performance of this MOSFET makes it an excellent choice for light dimmers, street light controllers and any other application where high frequency switching is required.

This device uses an N-channel MOSFET to achieve high frequency switching at low gate voltages. It allows for fast switching and minimizes switching losses, allowing for high efficiency power conversion and excellent load regulation. Additionally, the P-channel MOSFET and the low-threshold voltage reduce power dissipation and improve the device’s performance.

The IRF7241TRPBF is a versatile power MOSFET that offers excellent performance and features, making it suitable for a variety of applications. Its low-resistance silicon N-channel MOSFET ensures low power dissipation, while the low-threshold voltage and low gate charge makes it an ideal choice for efficient power switching applications. With a high surface-mounting breakdown voltage rating and a maximum drain-source voltage, this MOSFET can be applied to a range of industrial, consumer and automotive applications.

The specific data is subject to PDF, and the above content is for reference