![IRF730A Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | IRF730A-ND |
Manufacturer Part#: |
IRF730A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 400V 5.5A TO-220AB |
More Detail: | N-Channel 400V 5.5A (Tc) 74W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 74W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 600pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1 Ohm @ 3.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRF730A is a powerful MOSFET transistor developed by International Rectifier, capable of fast switching frequencies and low on-state resistance. It is commonly used in audio power amplifiers, DC to DC converters, and other applications requiring high power density and maximum performance.
Unlike a bipolar transistor, which operates by sending current through two P-type and N-type semiconductor layers, the MOSFET consists of four terminals, or "pins": the gate, drain and source, with the fourth pin being a substrate. The IRF730A further differs from the bipolar transistor in that it requires the gate to be triggered by electricity, rather than current flow, meaning the current can be easily switched by controlling the gate.
The field of application for IRF730A is largely due to its significant advantages over traditional MOSFETs. Its low total capacitance allows for high switching speeds; its low on-state resistance also suggests improved efficiency when dealing with large amounts of power. Additionally, its streamlined design requires less physical space and power, making it popular for portable electronics.
The working principle of IRF730A is an extension of the MOSFET. When no voltage is supplied to the gate, the channel between the drain and source is blocked thus turning off the current. However, when voltage is applied to the gate, an electric field is created in the channel allowing current to flow between the drain and source, thereby providing a level of power control.
The IRF730A is capable of passing low level signals due to its low capacitance, yet it can also handle high level signals with its high breakdown voltage and nonlinear characteristics. These combine to make the IRF730A an excellent choice for a variety of applications, including power amplifiers, switching regulators, and converter designs.
The IRF730A is a versatile and effective MOSFET transistor that has found success in many areas. Its low on-state resistance and large operating current rating make it an attractive option when dealing with large amounts of power, while its low capacitance and high-frequency switching capabilities make it a perfect choice for audio applications.
The specific data is subject to PDF, and the above content is for reference
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