![IRF730AL Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | IRF730AL-ND |
Manufacturer Part#: |
IRF730AL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 400V 5.5A TO-262 |
More Detail: | N-Channel 400V 5.5A (Tc) 74W (Tc) Through Hole I2P... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 74W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 600pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1 Ohm @ 3.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Bulk |
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IRF730AL is a versatile and highly efficient Field Effect Transistor (FET) specifically designed for applications in the automotive industry. The FET is rated at an operating voltage of 100V and is capable of delivering a maximum current rating in excess of 800mA. As a single polarity FET, the device has a simple “on/off” style of operation in which the gate signal is used to control the drain/source current. This means that the FET can be used for applications where a constant voltage potential is required, such as in DC motor control.
The major advantage of using an IRF730AL is its low voltage and power dissipation. The device only dissipates a maximum of 24.5 watts, making it highly suitable for any application where power consumption needs to be kept to a minimum. The low heat output also allows the FET to be used for a variety of high frequency applications, such as for high speed switching of data. The extremely low on-state voltage of the FET makes it possible to reach high switching speeds, making it suitable for high-frequency switching applications.
By virtue of its balanced internal gate design, the IRF730AL is very reliable in operation. This means that the device can be used in a wide range of applications where a constant result is required. Its reliability allows the device to be used in the most demanding applications and environments.
In terms of its working principle, the FET relies on the operation of a metal oxide semiconductor. A metal oxide is placed between two electrodes, called the Gate and Source. A positive voltage applied to the Gate causes a current to flow between the Source and Drain. This current is controlled by the Gate voltage, allowing the device to be used as a switch. The Gate voltage is normally controlled using an external device such as a transistor or operational amplifier. The Gate voltage determines the voltage, current, and power ratings for the FET.
The IRF730AL is an ideal FET for applications which require the use of high speed switching and low dissipation. The FET can be used in a variety of applications ranging from automotive to data communication, due to its low dissipation and reliable operation. Its low voltage and power dissipations make it highly suited for applications where power consumption needs to be kept to a minimum.
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