IRF730ASTRL Allicdata Electronics
Allicdata Part #:

IRF730ASTRL-ND

Manufacturer Part#:

IRF730ASTRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 400V 5.5A D2PAK
More Detail: N-Channel 400V 5.5A (Tc) 74W (Tc) Surface Mount D2...
DataSheet: IRF730ASTRL datasheetIRF730ASTRL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 74W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRF730ASTRL is a type of transistor – FETs, MOSFETs – Single. It is a high-power MOSFET commonly used in switching mode power supplies, DC-DC converters and high-side load switches. They are also widely used in a wide range of industrial and commercial applications, such as communication networks, automotive, industrial and automotive controllers and more.

The IRF730ASTRL is a MOSFET designed to operate in high-efficiency, high-current applications. It features low gate charge, low on-state resistance and low power dissipation. The device is suitable for switching applications such as motor control, power management, lighting and power conversion applications.

In high efficiency applications, the IRF730ASTRL offers superior performance. The device is capable of delivering up to 125A of continuous drain current in a TO-220 package. It has a maximum operating temperature of 150°C, making it suitable for high temperature applications. Additionally, it features reverse-bias safe operating area (RBSOA) for superior reliability.

The device utilises an enhancement mode design that offers a gate-source breakdown voltage of 17V and an on-state drain breakdown voltage of 75V. The device also employs octal fet technology which allows for the adjustment of the drain voltage and current configuration. This feature allows for a high degree of versatility and customisation for application specific requirements.

When it comes to the working principle of IRF730ASTRL, it relies on the properties of MOSFET devices. The device consists of four terminals: gate, drain, source and substrate. By applying an electric potential to the gate, that voltage is transferred to the substrate and the electric field between gate and substrate is used to control the flow of carriers between the drain and source. The greater the gate voltage, the higher the current flow and the lower the gate voltage, the lower the current flow.

The IRF730ASTRL also features an integrated body diode, making it suitable for flyback and other rectifying applications. The device is also well suited for high-side switching circuits, such as lighting control and motor control. Additionally, the device offers a low On-Resistance RDS(on) of 3.2m@10V, making it highly efficient in power supply applications.

In conclusion, the IRF730ASTRL is a highly versatile and reliable transistor – FETs, MOSFETs – Single that is widely used in high power switching mode applications. It provides excellent performance with low on-state resistance and superior reliability. The device’s integrated body diode and adjustable drain voltage and current configuration make it highly suited for flyback and rectifying applications. The device’s low power dissipation and RDS(on) make it suitable for power management applications. The IRF730ASTRL is a great choice for anyone looking for a reliable and powerful MOSFET.

The specific data is subject to PDF, and the above content is for reference

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