![IRF730ASTRR Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | IRF730ASTRR-ND |
Manufacturer Part#: |
IRF730ASTRR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 400V 5.5A D2PAK |
More Detail: | N-Channel 400V 5.5A (Tc) 74W (Tc) Surface Mount D2... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 74W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 600pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1 Ohm @ 3.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRF730ASTRR is an enhancement-mode MOSFET. As a type of power switch, it finds its applications in the electronic industry due to its reliable performance, greatest robustness and highest level of reliability. It is widely used in switching power conversions, battery-powered devices and power amplification. It is also used in the aerospace and automotive industry.
The working principle of an enhancement-mode MOSFET is based on the transfer of electrons from source to drain region. The source and drain regions are electrically connected to the drain and source regions of a transistor, respectively. The amount of current flowing through the transistor is determined by the gate-source voltage, which controls the resistance between source and drain. Hence, the current through the transistor is proportional to the gate-source voltage. When the gate-source voltage reaches a certain level, the MOSFET is turned on and it begins to conduct current.
The IRF730ASTRR provides a wide range of protection features, such as reverse-battery protection, under-voltage protection, thermal protection, over-voltage protection, power-on reset and over-temperature protection. It also provides low-impedance protection against transient voltage spikes and electrostatic discharge. Its reverse-battery protection feature helps to protect the components of the circuit from short-circuiting when connecting batteries in reverse polarity. Thermal shutdown feature of the IRF730ASTRR helps in protecting the components from overheating and prolonged operation.
IRF730ASTRR offers robust operation in both DC and AC devices. Its low on-resistance guarantees efficient operation and continuous current in the device. Its excellent high-frequency performance and low power consumption make it a great choice for power supply applications in devices requiring a solid power switch. Its fast switching capabilities make it suitable for applications that require high-speed power control with low power loss.
In addition, IRF730ASTRR is an economical solution compared to bipolar transistors. It also has better power handling capabilities and low gate drive requirements. The device also requires less board space than bipolar transistors, making it an ideal choice for applications where size is a matter of concern. It also has superior thermal conductivity, making it optimal for higher power ratings.
The IRF730ASTRR is a reliable, easy-to-use device, suitable for a wide variety of applications. Its efficient and reliable design, combined with its competitive pricing and ease of fabrication, make it a great choice for power conversion, battery-powered applications and power amplification.
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