
Allicdata Part #: | IRF730BPBF-ND |
Manufacturer Part#: |
IRF730BPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 400V 5.5A TO-220AB |
More Detail: | N-Channel 400V 6A (Tc) 104W (Tc) Through Hole TO-2... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 104W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 311pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1 Ohm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRF730BPBF is a single N-Channel field-effect transistor from the IRF73x series. The IRF73x series of transistor is a vertical-channeled metal-oxide-semiconductor field-effect transistor (MOSFET), known for its steady switching performance, low power loss, and low acoustic noise. It is a popular choice for vertical-channel MOSFET devices in a wide array of industrial and commercial applications.
Application Fields
The IRF730BPBF is typically used for power switching in PWM controllers, bridge rectifiers, display backlighting, high-frequency converters, and DC/DC converters. It can also be used to control motors and pumps in industrial applications, which require a fast and highly efficient energy transfer. This MOSFET is also a reliable choice for telecommunication and data processing systems.
Working Principle
MOSFETs, such as the IRF730BPBF, operate by allowing electric current to flow through the metallic gate of the device, rather than through the source or drain. This type of MOSFET is also often referred to as a vertical channel MOSFET because it has a vertical channel between the source and drain, rather than a horizontal channel. Depending on the voltage given to the gate, the electric current will either be enhanced or blocked from flowing through the channel.
Because the gate controls the amount of current that passes through the transistor, this type of MOSFET is often used for high-speed switching. This is because the gate offers a very low resistance path for the current, which allows the current to be switched on and off quickly, with minimal loss compared to other types of transistors.
The IRF730BPBF features a drain current of up to 70A, a breakdown voltage of 200V, and a maximum voltage of 40V. It has a Total Gate Charge (Qg) of 13nC and a Total Gate charge (Qgs) of 1.8nC. The device also has an on-state resistance of 8mΩ, which provides improved conduction over other types of transistors. The power dissipation of the transistor is 75W.
The IRF730BPBF possesses great versatility and performance, allowing it to be used in a variety of applications. It offers a low conduction loss and can be used for high-speed switching, making it the ideal choice for industrial applications.
The specific data is subject to PDF, and the above content is for reference
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