Allicdata Part #: | IRF730L-ND |
Manufacturer Part#: |
IRF730L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 400V 5.5A TO-262 |
More Detail: | N-Channel 400V 5.5A (Tc) Through Hole I2PAK |
DataSheet: | IRF730L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 600pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1 Ohm @ 3.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRF730L is a silicon N-Channel Mosfet, which is a type of transistor that is built from four layers of doped silicon and is used in many different applications, such as switching and amplifying electronic signals. It has a common gate, drain and source, which are separated by an insulation layer. This transistor is an inherently low power device, making it particularly suitable for cost–sensitive applications.
The IRF730L works by using a current into the control gate to vary the resistance between the drain and source. When the control gate is positive with respect to the source, the resistance between the drain and source is low, allowing current to flow freely. If the control gate is negative, the resistance between the drain and source is high and no current can flow. This type of transistor is usually used to switch or amplify electrical signals, as it can operate in both digital and analog regimes.
The primary application of the IRF730L is as an switch in electrical circuits. It is widely used in low power logic circuits, due to its low power consumption. This makes it especially useful for devices that must operate on battery power for long periods of time. In addition, the IRF730L is also used in power management systems, as it can effectively control the voltage and current levels in the power grid. Other applications of the IRF730L include motor control, audio amplifiers, ramp-rate control and logic level conversion.
The IRF730L is simple to use and can be easily incorporated into a variety of circuit designs. The transistor comprises three pins, a gate, drain and source, which all need to be connected to properly configure the circuit. As the gate voltage is increased, the resistance between the drain and source decreases and current flow increases. If the gate voltage is decreased, the resistance between the drain and source increases and the current flow decreases. The gate needs to be connected to a power source and the drain and source must be connected to an appropriate load to complete the circuit.
In summary, the IRF730L is a silicon N-Channel Mosfet which is used for switching or amplifying electronic signals. It is most commonly used as a switch in low power logic circuits due to its ease of use and low power consumption. The IRF730L is also used in power management systems, motor control, audio amplifiers and logic level conversion. It consists of three pins, a gate, drain and source, which all need to be connected together in order to properly configure the circuit.
The specific data is subject to PDF, and the above content is for reference
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