IRF730L Allicdata Electronics
Allicdata Part #:

IRF730L-ND

Manufacturer Part#:

IRF730L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 400V 5.5A TO-262
More Detail: N-Channel 400V 5.5A (Tc) Through Hole I2PAK
DataSheet: IRF730L datasheetIRF730L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): --
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRF730L is a silicon N-Channel Mosfet, which is a type of transistor that is built from four layers of doped silicon and is used in many different applications, such as switching and amplifying electronic signals. It has a common gate, drain and source, which are separated by an insulation layer. This transistor is an inherently low power device, making it particularly suitable for cost–sensitive applications.

The IRF730L works by using a current into the control gate to vary the resistance between the drain and source. When the control gate is positive with respect to the source, the resistance between the drain and source is low, allowing current to flow freely. If the control gate is negative, the resistance between the drain and source is high and no current can flow. This type of transistor is usually used to switch or amplify electrical signals, as it can operate in both digital and analog regimes.

The primary application of the IRF730L is as an switch in electrical circuits. It is widely used in low power logic circuits, due to its low power consumption. This makes it especially useful for devices that must operate on battery power for long periods of time. In addition, the IRF730L is also used in power management systems, as it can effectively control the voltage and current levels in the power grid. Other applications of the IRF730L include motor control, audio amplifiers, ramp-rate control and logic level conversion.

The IRF730L is simple to use and can be easily incorporated into a variety of circuit designs. The transistor comprises three pins, a gate, drain and source, which all need to be connected to properly configure the circuit. As the gate voltage is increased, the resistance between the drain and source decreases and current flow increases. If the gate voltage is decreased, the resistance between the drain and source increases and the current flow decreases. The gate needs to be connected to a power source and the drain and source must be connected to an appropriate load to complete the circuit.

In summary, the IRF730L is a silicon N-Channel Mosfet which is used for switching or amplifying electronic signals. It is most commonly used as a switch in low power logic circuits due to its ease of use and low power consumption. The IRF730L is also used in power management systems, motor control, audio amplifiers and logic level conversion. It consists of three pins, a gate, drain and source, which all need to be connected together in order to properly configure the circuit.

The specific data is subject to PDF, and the above content is for reference

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