
Allicdata Part #: | IRF7321D2-ND |
Manufacturer Part#: |
IRF7321D2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 30V 4.7A 8-SOIC |
More Detail: | P-Channel 30V 4.7A (Ta) 2W (Ta) Surface Mount 8-SO |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 710pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
Series: | FETKY™ |
Rds On (Max) @ Id, Vgs: | 62 mOhm @ 4.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.7A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRF7321D2 is a vertical N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) that is widely used to control current flow in power device applications. The MOSFET has a very low on-state resistance and is able to handle high voltage and current levels for applications such as power and lighting circuits. The IRF7321D2 is available in several packages, such as the TO-220S, TO-252, and D2PAK.
The IRF7321D2 is a three-terminal MOSFET, with a source, a drain, and a gate. The source is the current source, the drain is the current sink, and the gate is the control terminal. When a voltage is applied to the gate of the MOSFET, it creates an electric field that attracts the electrons to the drain and away from the source, thus turning the device on, and allowing current to flow through it. Whenever the gate voltage is removed, the electric field weakens, and the MOSFET turns off, preventing current flow.
The IRF7321D2 is particularly useful in applications where high current and high voltage switching is needed. It is used in motor controls, lighting systems, power supplies, and other circuits that require fast switching of high power signals. It is also used in switching converters, such as boost and buck converters, as well as in DC-DC converters.
The main advantage of the IRF7321D2 is its low on-state resistance, which makes it very suitable for applications that require fast switching of high current and voltage levels. Its low on-state resistance also allows for high frequency operation, up to the MHz range. The low on-state resistance also provides low switching losses, reducing power dissipation and heat generation.
The IRF7321D2 is also characterized by low gate charge, which makes it suitable for use in high frequency switching applications. The low gate charge reduces the charge needed to turn the MOSFET on and off, reducing power consumption and improving switching speed. Furthermore, the IRF7321D2 is also characterized by good thermal stability, allowing it to be used in harsh operating conditions.
The IRF7321D2 also features ESD (electrostatic discharge) protection, which helps to reduce the risk of damaging the MOSFET due to static electricity. ESD protection is important in applications where the MOSFET is exposed to sensitive electronics.
Overall, the IRF7321D2 is a versatile and reliable MOSFET that can be used in a variety of applications. Its low on-state resistance, low gate charge, low switching losses, and good thermal stability make it suitable for high current and voltage levels, making it ideal for a wide range of applications. Furthermore, its ESD protection helps to protect sensitive electronics from static electricity.
The specific data is subject to PDF, and the above content is for reference
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