| Allicdata Part #: | IRF7326D2TR-ND |
| Manufacturer Part#: |
IRF7326D2TR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET P-CH 30V 3.6A 8-SOIC |
| More Detail: | P-Channel 30V 3.6A (Ta) 2W (Ta) Surface Mount 8-SO |
| DataSheet: | IRF7326D2TR Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2W (Ta) |
| FET Feature: | Schottky Diode (Isolated) |
| Input Capacitance (Ciss) (Max) @ Vds: | 440pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
| Series: | FETKY™ |
| Rds On (Max) @ Id, Vgs: | 100 mOhm @ 1.8A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3.6A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The IXFK7326D2TR is a dual N-Channel, back-gate MOSFET transistor designed and produced by Panasonic Corporation. It has very low gate charge, low gate-source and gate-drain capacitance, and high breakdown voltage, allowing it to be used in many applications. In this article, we will discuss the application field and working principle of the IXFK7326D2TR MOSFET transistor.
The IXFK7326D2TR is a general-purpose MOSFET transistor and is used in a variety of applications. It is used in synchronous rectifiers, low-side switches, motor speed control and other power conversion applications due to its excellent resistance to noise and its very low on-resistance. It is also commonly used in logic-level switching applications, and as a switch for logic-level I/O signals.
It is also used in analog switching applications such as audio and video amplifiers, instrumentation and signal processing. These applications require very low noise and very low distortion, and the IXFK7326D2TR is well suited to these applications.
The IXFK7326D2TR is a low-voltage MOSFET transistor, with a maximum breakdown voltage of 10V. It has a low total capacitance of 3.8pF, and a very low gate charge of 5nC. This makes it very suitable for high-frequency switching and signal processing applications, where very low on-resistance and very low switching times are essential.
The working principle of the IXFK7326D2TR MOSFET transistor is based on the fact that when the voltage across the gate and source terminals are equal, the MOSFET is on, and when the voltage across the gate and source terminals is higher than the threshold voltage, the MOSFET is off. The MOSFET will be in either on or off state depending on the voltage across the gate and source terminals.
The working of the IXFK7326D2TR is very simple. When a positive voltage is applied to the gate terminal, the electrons flow from the gate terminal to the drain terminal, and the MOSFET is on. When the positive voltage is removed, the current flow stops and the transistor is off. It can be considered as a ‘switch’, as it is able to switch current on and off, depending on the voltage applied to the gate terminal.
The IXFK7326D2TR is a versatile low-voltageMOSFET transistor, used in many applications. It is suitable for a wide variety of applications, including motor speed control, logic-level switching andsynchronousrectification. Its very low gate charge, very low on-resistance, and low-critical capacitance indicated that it is suitable for high-frequency switching and signal processing applications.
The specific data is subject to PDF, and the above content is for reference
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IRF7326D2TR Datasheet/PDF