
Allicdata Part #: | IRF7353D1-ND |
Manufacturer Part#: |
IRF7353D1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 6.5A 8-SOIC |
More Detail: | N-Channel 30V 6.5A (Ta) 2W (Ta) Surface Mount 8-SO |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 650pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
Series: | FETKY™ |
Rds On (Max) @ Id, Vgs: | 32 mOhm @ 5.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRF7353D1 is a high-performance mobile N-channel MOSFET transistor and is widely used in industry today. It is characterized by its rugged construction, low on-resistance and fast switching speed. This transistor is highly suitable for applications requiring high frequency operation because of its high current (up to 14.6A) and low on-state resistance (RDS(ON) is 0.023 ohms). Its small and lightweight design makes it suitable for applications with space constraints.
In the application field, the IRF7353D1 is widely used in various industries. It can be used in switching circuits and power supplies, as well as in the automotive sector. In the automotive sector, it is used in the control of headlights, engine control and antilock braking systems. In the telecommunications sector, it is used in high-frequency amplifiers and radio transmitters. In the consumer electronics sector, it is prominently used in switching power supplies and variable frequency drives.
The working principle of the IRF7353D1 transistor is based on the principle of the field-effect transistor (FET). It enables the device to function as an amplifier and switch. The working of a FET is illustrated as follows: it includes a source, gate and a drain. The source and drain are left open, and when a gate voltage is applied, an electric field develops in between them and carries a current. This current is used for switching or amplifying purposes.
The main application of the IRF7353D1 is in power switching and modulation. The fast switching of the transistor enables smooth and efficient control of a load which is required in high-performance power switching. It can also be used in low-frequency circuits, especially those requiring pulse-width modulation. The low on-state resistance and high efficiency allow the device to be utilized in various power-efficiency applications. Other applications that make use of this transistor are Class-D amplifier power stages, mobile power applications, load switching circuits and voltage regulation.
In summary, the IRF7353D1 is a high-performance mobile N-channel MOSFET transistor characterized by its rugged construction, low on-resistance and fast switching speed. It has multiple applications and is primarily used in power switching and modulation, as well as in low-frequency circuits requiring pulse-width modulation. as well as in various power-efficiency applications such as Class-D amplifier power stages, mobile power applications, load switching circuits and voltage regulation.
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