IRF7353D2 Allicdata Electronics
Allicdata Part #:

IRF7353D2-ND

Manufacturer Part#:

IRF7353D2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 6.5A 8-SOIC
More Detail: N-Channel 30V 6.5A (Ta) 2W (Ta) Surface Mount 8-SO
DataSheet: IRF7353D2 datasheetIRF7353D2 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Series: FETKY™
Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRF7353D2 is an N-Channel Power MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor) designed for use in power electronic applications. It is manufactured in a 350V, N-channel MOSFET process. It has an on-resistance of 1.2 Ohms and provides a maximum input voltage rating of 50V. It has an on-resistance of 0.18 Ohms and is able to handle a total power dissipation of 20Watt.

The IRF7353D2 is a MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor) that is used in many power electronic applications. It is ideal for applications where efficient power management is critical, such as switching power supplies, adjustable power supply circuitry, and motor driver circuits. The application field of its single-pole, double-throw configuration gives it great versatility as an interface between digital devices and analog circuits.

The working principle of the IRF7353D2 is that when a voltage is applied to the gate terminal, the drain-source channel is opened and current flows between the source and the drain. The source is connected to the ground of the circuit and the drain is connected to the load. When a current flows through the MOSFET, it induces an electrical field in the gate terminal, which controls the channel opening between the source and the drain. When the voltage applied to the gate is increased, the channel opens up wider and allows more current to flow through the MOSFET.

The IRF7353D2 is a very common MOSFET used in many power electronic applications due its on-resistance of 0.18 Ohms, its 50V maximum gate voltage rating, and its 20W total power dissipation capability. This makes it ideal for applications that require very efficient power management, such as switching power supplies, adjustable power supply circuitry, and motor driver circuits.

In summary, the IRF7353D2 is a N-Channel Power MOSFET designed for use in power electronic applications. It has an on-resistance of 0.18 Ohms and is rated for a maximum voltage of 50V and a total power dissipation capability of 20Watt. It is commonly used in applications such as switching power supplies, adjustable power supply circuitry, and motor driver circuits due to its versatile single-pole, double-throw configuration and its efficient power management capabilities. The working principle of the IRF7353D2 is that when a voltage is applied to the gate terminal, the drain-source channel is opened and current flows between the source and the drain.

The specific data is subject to PDF, and the above content is for reference

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