IRF737LCL

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	I2PAK
Mounting Type:	Through Hole
Operating Temperature:	--
Power Dissipation (Max):	--
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	430pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	17nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	750 mOhm @ 3.7A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	6.1A (Tc)
Drain to Source Voltage (Vdss):	300V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IRF737LCL Application Field and Working Principle

The IRF737LCL is an N-Channel Logic Level MOSFET, which has an impressive list of features that make it ideal for a range of applications. It provides improved energy efficiency, fast switching speed, and excellent thermal performance while minimizing power dissipation and electrical interference. The IRF737LCL is suitable for a wide range of applications, including motor control, power supply switching, and even the most demanding field applications.The IRF737LCL is a field effect transistor (FET) that is used as a switch to control electric current in a circuit. It is constructed from two layers of semiconductor material. The gate of the MOSFET is formed between these two layers and insulated from them with an oxide layer. Applying a voltage to the gate can turn the MOSFET on and off. The current must first pass through the gate, which allows for precise current regulation. The IRF737LCL is an N-channel logic level MOSFET. This means it has a logic level threshold voltage that is low enough to be turned on or off using logic signals. This is important in applications such as motor control, where logic signals can be used to precisely control the amount of current flowing through the MOSFET.The IRF737LCL is designed to handle up to a peak 1A current and operates at a maximum junction temperature of 175°C. It offers low gate charge, fast switching speed and very low output capacitance. These features make it especially suitable for applications where high frequency repetitive switching is required, such as in high power switch-mode power supplies.The IRF737LCL also has a low drain-source On-resistance of RDS(on) of 11.2mΩ. This ensures minimal heat generation and improved energy efficiency. The low thermal resistance ensures that the device doesn’t overheat even when mounted onto larger PCBs. This allows for reliable and accurate operation at greater operating temperatures.It is not just the impressive list of features that make the IRF737LCL the ideal device for a wide range of applications, but its excellent electrical reliability as well. This device was designed to operate reliably and accurately even during unforeseen circumstances such as thermal cycling or electrostatic discharge. Its Pb-free package with back-side metallization offers improved mechanical stability and moisture protection.In conclusion, the IRF737LCL is an N-channel logic level MOSFET that offers low gate charge, fast switching speed, and very low output capacitance. Its low thermal resistance, low drain-source on-resistance, and excellent electrical reliability make it ideal for a wide range of applications such as motor control, power supply switching, and even the most demanding field applications.

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