
Allicdata Part #: | IRF737LCSTRR-ND |
Manufacturer Part#: |
IRF737LCSTRR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 300V 6.1A D2PAK |
More Detail: | N-Channel 300V 6.1A (Tc) Surface Mount D2PAK |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -- |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 430pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 750 mOhm @ 3.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.1A (Tc) |
Drain to Source Voltage (Vdss): | 300V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Introduction
The IRF737LCSTRR is a single N-channel Integrated Power MOSFET manufactured by International Rectifier. This device is from a family of power semiconductors that are intended for use in switching, computer and telecom power supplies, DC-DC converters, motor controllers and general purpose switching applications. The IRF737LCSTRR is a logic level N-channel MOSFET featuring fast switching time, low on-resistance, low gate charge and temperature compensated safe operating area.
Application Field
The IRF737LCSTRR can be used in a wide range of applications. The device is suitable for switching and amplification systems, voltage and current regulators, power converters, battery powered systems, DC-DC converters, motor controllers and general purpose switching. In addition, it can be used in telecom power supplies, including wireless and cellular base stations, as well as in computers and networking systems. It can also be used in a wide range of power switching applications, power supplies, motor applications and automotive control systems.
Working Principle
The IRF737LCSTRR is an N-channel MOSFET designed for high current, low leakage and fast switching applications. It is a three terminal power device that operates using the principle of drain-source depletion to provide high-speed pulse switching in applications requiring up to 600V. It features low gate charge, fast switching time and low on-resistance.
The device uses the principle of voltage control, which means that it operates by the application of a control signal to the gate terminal. When a positive voltage is applied to the gate terminal, electron carriers in the channel region are activated, creating a conductive path from the source to the drain. When the gate voltage is removed, electron carriers in the channel region are deactivated, blocking the current flow.
The device also has high current carrying capability and is available in different packages, such as Surface Mount, TO-220 and TO-252. It has a breakdown voltage of 600 V and can handle a maximum drain current of 32 A.
Conclusion
The IRF737LCSTRR is a single N-channel Integrated Power MOSFET manufactured by International Rectifier. It is a logic level N-channel MOSFET featuring fast switching time, low on-resistance, low gate charge and temperature compensated safe operating area. The IRF737LCSTRR can be used in a wide range of applications, such as switching and amplification systems, voltage and current regulators, power converters, battery powered systems, DC-DC converters, motor controllers and general purpose switching. The device operates using the principle of drain-source depletion to provide high-speed pulse switching, and features high current carrying capability, with a breakdown voltage of 600 V and a maximum drain current of 32 A.
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