IRF737LCSTRR Allicdata Electronics
Allicdata Part #:

IRF737LCSTRR-ND

Manufacturer Part#:

IRF737LCSTRR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 300V 6.1A D2PAK
More Detail: N-Channel 300V 6.1A (Tc) Surface Mount D2PAK
DataSheet: IRF737LCSTRR datasheetIRF737LCSTRR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: --
Power Dissipation (Max): --
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 750 mOhm @ 3.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Drain to Source Voltage (Vdss): 300V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Introduction

The IRF737LCSTRR is a single N-channel Integrated Power MOSFET manufactured by International Rectifier. This device is from a family of power semiconductors that are intended for use in switching, computer and telecom power supplies, DC-DC converters, motor controllers and general purpose switching applications. The IRF737LCSTRR is a logic level N-channel MOSFET featuring fast switching time, low on-resistance, low gate charge and temperature compensated safe operating area.

Application Field

The IRF737LCSTRR can be used in a wide range of applications. The device is suitable for switching and amplification systems, voltage and current regulators, power converters, battery powered systems, DC-DC converters, motor controllers and general purpose switching. In addition, it can be used in telecom power supplies, including wireless and cellular base stations, as well as in computers and networking systems. It can also be used in a wide range of power switching applications, power supplies, motor applications and automotive control systems.

Working Principle

The IRF737LCSTRR is an N-channel MOSFET designed for high current, low leakage and fast switching applications. It is a three terminal power device that operates using the principle of drain-source depletion to provide high-speed pulse switching in applications requiring up to 600V. It features low gate charge, fast switching time and low on-resistance.

The device uses the principle of voltage control, which means that it operates by the application of a control signal to the gate terminal. When a positive voltage is applied to the gate terminal, electron carriers in the channel region are activated, creating a conductive path from the source to the drain. When the gate voltage is removed, electron carriers in the channel region are deactivated, blocking the current flow.

The device also has high current carrying capability and is available in different packages, such as Surface Mount, TO-220 and TO-252. It has a breakdown voltage of 600 V and can handle a maximum drain current of 32 A.

Conclusion

The IRF737LCSTRR is a single N-channel Integrated Power MOSFET manufactured by International Rectifier. It is a logic level N-channel MOSFET featuring fast switching time, low on-resistance, low gate charge and temperature compensated safe operating area. The IRF737LCSTRR can be used in a wide range of applications, such as switching and amplification systems, voltage and current regulators, power converters, battery powered systems, DC-DC converters, motor controllers and general purpose switching. The device operates using the principle of drain-source depletion to provide high-speed pulse switching, and features high current carrying capability, with a breakdown voltage of 600 V and a maximum drain current of 32 A.

The specific data is subject to PDF, and the above content is for reference

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