IRF7402TR

Vgs(th) (Max) @ Id:	700mV @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	650pF @ 15V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	22nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	35 mOhm @ 4.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.7V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	6.8A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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IRF7402TR Application Field and Working Principle

The IRF7402TR is a high-efficiency, high-voltage, high-current, single-pole, double-throw (SPDT) single-gate field-effect transistor (FET). It is specifically designed to operate in a wide range of power transistor, motor control, audio amplifier, servo control, and telecommunication applications. It is ideal for high-current control applications where low gate drive and ultra-high output current are needed.

Application Fields

The IRF7402TR is well suited to many different applications fields. The prime focus is on applications that require a high current density with relatively low gate drive. This makes it ideal for applications in motor control, power transistor and audio amplifiers, servo control, and telecommunication systems.

• Motor Control: In motor control systems, the IRF7402TR can be used as an efficient switch to control current to the motor. Its wide current range makes it a particularly suitable choice for high-Current motor control systems as it can be easily driven with digitally controlled signals.
• Power Transistor: The IRF7402TR is also ideal for high-Current power transistor designs, as it requires only a low gate drive and is capable of providing high output currents. This makes it well suited for designs that require high current switching, including audio amplifiers and power supplies.
• Audio Amplifiers: The IRF7402TR is a great choice for high-Current audio amplifiers. It is capable of providing high current outputs, which is important for amplifying low-level signals. It also has a low gate drive, which is essential for achieving low-level voltage transients.
• Servo Control: The IRF7402TR is ideal for controlling servo motors, providing high current outputs with low gate drive. This makes it well suited to controlling servo motors, as it can be easily driven with digitally controlled signals.
• Telecommunication Systems: The IRF7402TR is an ideal choice for telecommunication systems, as it offers high current outputs with low gate drive. This makes it ideal for driving switching systems, where high current outputs are needed.

Working Principle

The IRF7402TR is a single-gate field-effect transistor (FET). It operates by creating an electric field between the source and drain terminals, which controls the current. This electric field is created when a voltage is applied between the gate and source terminals. When a high voltage is applied to the gate, it attracts charge carriers from the source to the drain, forming a channel. This channel allows current to flow from the source to the drain. When the gate voltage is removed, the channel is destroyed, and current ceases to flow.The advantage of FETs over traditional bipolar transistors is their high-impedance input and low-impedance output. This makes them ideal for applications where high current is needed, but the gate drive must remain low. It also makes them very efficient in terms of power consumption, since only the gate voltage needs to be supplied, not a large current.

Conclusion

The IRF7402TR is an excellent choice for a variety of applications, including motor control, power transistors, audio amplifiers, servo control, and telecommunications systems. It is a high-efficiency, high-voltage, high-current, single-pole, double-throw (SPDT) single-gate field-effect transistor (FET). It operates by creating an electric field between the source and drain terminals, which controls the current. This electric field is created when a voltage is applied between the gate and source terminals. The advantage of FETs over traditional bipolar transistors is their high-impedance input and low-impedance output. This makes them ideal for applications where high current is needed, but the gate drive must remain low.

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