IRF7406TRPBF Discrete Semiconductor Products |
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| Allicdata Part #: | IRF7406PBFTR-ND |
| Manufacturer Part#: |
IRF7406TRPBF |
| Price: | $ 0.22 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET P-CH 30V 5.8A 8-SOIC |
| More Detail: | P-Channel 30V 5.8A (Ta) 2.5W (Ta) Surface Mount 8-... |
| DataSheet: | IRF7406TRPBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.21600 |
| 10 +: | $ 0.20952 |
| 100 +: | $ 0.20520 |
| 1000 +: | $ 0.20088 |
| 10000 +: | $ 0.19440 |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 59nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 45 mOhm @ 2.8A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5.8A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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IRF7406TRPBF is a type of Insulated Gate Bipolar Transistor (IGBT), which is typically used in applications that require high-speed switching and voltage resistance. IGBTs are similar to MOSFETs in many ways, but they have slightly different characteristics when it comes to switching, current handling, and voltage resistance. The IRF7406TRPBF offers an efficient, low-cost solution for applications requiring a high-speed switching device.
The IGBT is a two-terminal device which operates by forming a PN junction between two oppositely charged regions, the emitter and the collector. It combines the beneficial features of both the MOSFET and the bipolar junction transistor (BJT). Its structure consists of a body diode, an N-type drift region, a source metallization and a gate metallization. The source metallization is connected to the collector and its gate metallization is connected to the gate of the device. By applying a gate voltage, the gate metallization forms a channel between the collector and the source terminals, thereby allowing current to flow through the transistor.
The IRF7406TRPBF has a wide range of applications, from low-power switching to high-power switching due to its high voltage breakdown capability and high switching speed. It has the ability to switch on and off very quickly and it can handle relatively large amounts of current, so it is ideal for applications that require fast switching and high current handling, such as motor control, soft starters, AC/DC converters, PWM inverters and power switching circuits.
The IRF7406TRPBF has two primary operation principles, linear and saturation mode. In linear mode, the voltage across the device is linearly proportional to the current going through it. This is the optimal mode for most applications as it offers high power efficiency and low power losses. In saturation mode, the voltage is low and the drain current is constant, regardless of the gate voltage. This mode is best used for applications requiring high current such as motor control.
The IGBT is an energy efficient and cost effective solution for power electronic applications, such as motor drives and inverters. It can handle large currents, operate at high frequencies and offer excellent switching characteristics, making it the ideal choice for high-speed applications. The IRF7406TRPBF is a powerful and versatile device that is well suited for many applications requiring high power and high speed switching.
The specific data is subject to PDF, and the above content is for reference
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IRF7406TRPBF Datasheet/PDF