IRF740A Allicdata Electronics
Allicdata Part #:

IRF740A-ND

Manufacturer Part#:

IRF740A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 400V 10A TO-220AB
More Detail: N-Channel 400V 10A (Tc) 125W (Tc) Through Hole TO-...
DataSheet: IRF740A datasheetIRF740A Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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Field Effect Transistors (FETs) are active components of electronic circuits used to control current flow in a circuit. The IRF740A is a type of FET, specifically a Single MOSFET, that offers an advantageous combination of properties for many applications. This article will discuss the IRF740A device and its features, applications, and working principles.

The IRF740A is a single through-hole-mount MOSFET in a TO-220AB package. It is a compact, low power device ideal for applications where device size and cost are important. It has a low on-resistance of about 1.45, which helps reduce losses and allows it to handle higher current loads than many other FETs. It also has a breakdown voltage of 60 V which, coupled with its package style, makes it suitable for a variety of power control applications.

Although primarily used for power control applications, the IRF740A is also used in analog switches, signal conditioning circuits, and audio frequency amplifiers. Its wide input voltage range makes it a popular choice for automotive applications due to its ability to handle different battery voltages and load ranges. Additionally, its low on-resistance capability allows it to be used in LED lighting applications, as well as in various switched mode power supply designs.

The IRF740A device is based on the MOSFET (Metal Oxide Semiconductor FET) principle of operation. A MOSFET consists of two semiconductor regions, the source and drain, with a ‘gate’ region in between. The gate is electrically isolated and so current can only flow between the source and the drain when a voltage is applied to the gate. This voltage, called the gate-source voltage, is determined by the type of MOSFET and the application. When an external voltage is applied to the gate, electrons are attracted to the region from the source, causing a gate-charge to be established. This gate-charge attracts electrons from the drain side of the semiconductor, creating a region between source and drain that is perfectly conducting, so that current can flow freely. This is known as the ‘on-state’ of the MOSFET, and is typically used in applications where a fixed output current is required, such as in power control applications.

The on-resistance of the IRF740A is very low and is typically rated at around 1.45, while the ‘off’ resistance is very high, in the range of 10 ohms. This low on-resistance allows it to handle high currents with minimal losses, making it suitable for many power control applications. Similarly, its high off-state resistance means that no current flows through the device when the gate-source voltage is below a certain threshold, making it an ideal choice for switching and signal conditioning circuits.

In summary, the IRF740A is a single, through-hole mount MOSFET device providing an advantageous combination of features for many power control and signal conditioning applications. It has a low on-resistance and high off-resistance and is based on the principles of MOSFET operation. Its wide input voltage range also makes it an ideal choice for automotive applications.

The specific data is subject to PDF, and the above content is for reference

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