Allicdata Part #: | IRF740ASTRRPBF-ND |
Manufacturer Part#: |
IRF740ASTRRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 400V 10A D2PAK |
More Detail: | N-Channel 400V 10A (Tc) 3.1W (Ta), 125W (Tc) Surfa... |
DataSheet: | IRF740ASTRRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1030pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 550 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRF740ASTRRPBF (IRF740) is a highly efficient, single-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) for power management and noise-free switching applications. It can be used as a discrete device, or incorporated as part of an integrated circuit. It is manufactured in high density complementary silicon technology, whichMAXIMizes efficiency and minimizes power consumption.
This MOSFET is part of the IRF740 family and has a typical drain-source breakdown voltage of 100 volts and a maximum drain current of 6 amps. It features a 0.45volt maximum gate threshold voltage and a maximum power dissipation of 500 milliwatts.
The IRF740ASTRRPBF is primarily used in switching power supply systems, DC-DC converters, motor control, relay control, and analog and digital switch circuits. It is designed to operate in environments where high switching speed, low voltage losses, and low power dissipation are required. In addition, the MOSFET has a maximum operating temperature of 175 degrees Celsius.
The IRF740 is an N-channel enhancement type MOSFET, meaning that it has an inherently low output impedance and high switching speed. It works by applying a voltage to the gate terminal, which in turn controls the current flow from the source to the drain. The voltage required to turn the device on or off is known as the gate threshold voltage. This device has a gate threshold voltage of 0.45 volts.
The core operation of MOSFETs is based on the universal property of a semiconductor material, where when a voltage is applied to one side, electrons and holes are formed on the opposite side, creating an electric field. This electric field is what controls the current flow between the source and drain in the IRF740. This current flow is dictated by the gate voltage applied. By adjusting the gate voltage, the user can control the current flow and power ratings of the device.
In addition, MOSFETs have an excellent input impedance, meaning that minimal energy losses occur due to their high capacitance. This makes them ideal for high-efficiency switching applications. The IRF740 is a very economical option for building power management systems and noise-free switch circuits.
The IRF740ASTRRPBF is an ideal choice for applications where high power efficiency and minimal power dissipation are needed. Its enhanced performance and durability make it suitable for many power electronic devices. Furthermore, its wide operating range, low gate threshold voltage, and high drain current capability make it a valuable component for many digital, analog, and power applications.
The specific data is subject to PDF, and the above content is for reference
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