IRF740LC Allicdata Electronics
Allicdata Part #:

IRF740LC-ND

Manufacturer Part#:

IRF740LC

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 400V 10A TO-220AB
More Detail: N-Channel 400V 10A (Tc) 125W (Tc) Through Hole TO-...
DataSheet: IRF740LC datasheetIRF740LC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRF740LC field effect transistor is one of the most common field effect transistors (FETs) used in applications that require high power handling, such as power switching and motor control. It\'s one type of metal–oxide–silicon FET (MOSFET) and it\'s advantageous for its small size and simple construction relative to other types of FETs. It\'s widely used in many different electronics applications, from automotive systems to consumer products.

A basic FET consists of three regions: the drain, the source and the gate. The drain and the source act as current-carrying terminals, and are analogous to the emitter and collector, respectively, of a bipolar junction transistor (BJT). The gate is an insulated electrode which carries a voltage that controls the current flowing between the drain and the source. In an N-channel FET, the channel consists of electrons, while in a P-channel device, the channel consists of holes.

A MOSFET is a type of FET which uses a metal-oxide layer as the gate insulator, instead of the conventional dielectric. This layer can be very thin, which makes for higher packing densities in integrated circuits. In addition, MOSFETs are inherently lower in power dissipation than other FETs, making them ideal for low-power applications.

The IRF740LC is a single-channel MOSFET designed for use in relatively high power applications, such as power switching and motor control. It is rated for a maximum drain-to-source voltage of 100V, a maximum junction temperature of 175°C, and a maximum drain current of 30A. It has an on resistance of just 0.003Ω when operated at a drain voltage of 4.5V.

The IRF740LC is also relatively easy to use. It can be controlled using a conventional logic signal; a logic low will turn off the device, while a logic high will turn it on. This makes it ideal for use in digital circuits, as it can easily be controlled by simple logic signals.

The IRF740LC can be used in a variety of applications, such as switching power supplies and motor controls. It can also be used as a linear amplifier, as its low on resistance and high power handling capability make it ideal for this use. In addition, it can be used in high power RF applications, such as amplifiers and switches.

The IRF740LC is an extremely versatile device, and can be found in many different applications. Its combination of high power handling capability, small size, and low on resistance make it ideal for many different applications, and make it one of the most popular MOSFETs available.

The specific data is subject to PDF, and the above content is for reference

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