IRF7410PBF Allicdata Electronics
Allicdata Part #:

IRF7410PBF-ND

Manufacturer Part#:

IRF7410PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 12V 16A 8-SOIC
More Detail: P-Channel 12V 16A (Ta) 2.5W (Ta) Surface Mount 8-S...
DataSheet: IRF7410PBF datasheetIRF7410PBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 4.5V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8676pF @ 10V
Vgs (Max): ±8V
Series: HEXFET®
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Discontinued at Digi-Key
Description

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IRF7410PBF is a N-channel enhancement-mode field-effect transistor manufactured by International Rectifier Corporation. It has a breakdown voltage level of 30V, a maximum drain-source voltage of 60V, and a maximum current of 6.1A. IRF7410PBF works by using a gate-source voltage that governs the current between a drain and a source. It is not suitable for use as a switch since it is only able to operate as a linear device under certain voltage and current conditions.

IRF7410PBF application field mainly includes power amplifier module, drive circuits and various switches, as well as various circuit control. This type of FETs could also be used in switching power supplies, switch interfaces, and different audio amplifiers. Moreover, due to its unique features, this type of FETs have a wide range of uses in different measuring and controlling systems.

When it comes to the working principle of the IRF7410PBF, the gate of the transistor is used to control the current flow to the drain, thereby changing the resistance between the drain and the source. This transistors uses the same gate control principle of other types of Field Effect Transistors (FETs). When the potential between the gate and source of the transistor is low, the body resistance between the source and drain is high and the current flow between them is blocked. As the difference between the gate and source increases, the resistance between the source and drain decreases, allowing the current to flow more easily.

In terms of the basic configuration of the IRF7410PBF, there are two side terminals closely linked by two diodes. The outer terminals act as the gate and source of the transistor while the inner terminals provide the link between the drain and the source. This type of FETs provides good reliability and is sturdy enough to withstand high temperatures and harsh environmental conditions.

When it comes to performance, the IRF7410PBF features high speed operation, low gate-bias requirements and bias-dependent behaviour compared to other types of FETs. It also has superior switching from drain-source to drain-source and better noise performance. This type of FETs is often used in applications where high operating temperature and ruggedness are required.

IRF7410PBF can be used as a power switch in many applications. Its maximum capacitance between the gate and the source enables extremely fast switching, which makes it perfect for use in high performance, high-speed devices. It is also suitable for use in switching power supplies and power interfaces, as well as in various measuring and controlling systems.

The IRF7410PBF is a very useful FETs and could be used in many different applications. It is highly reliable and easy to use, providing excellent performance and stability. This type of FETs is also quite popular as it has a wide range of applications and is able to work with many different high-power and high-Speed devices.

The specific data is subject to PDF, and the above content is for reference

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