IRF7413A Allicdata Electronics
Allicdata Part #:

IRF7413A-ND

Manufacturer Part#:

IRF7413A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 12A 8-SOIC
More Detail: N-Channel 30V 12A (Ta) 2.5W (Ta) Surface Mount 8-S...
DataSheet: IRF7413A datasheetIRF7413A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 6.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The International Rectifier IRF7413A is a depletion-mode, N-channel MOSFET. This transistor is specifically designed for use in high current, low frequency switching applications. It has a 75-A continuous drain current, 1400-V drain-to-source voltage, and a low on-resistance of 5.8 mOhm (max.). The IRF7413A is a general-purpose MOSFET with a high input impedance, low thermal resistance, and fast switching speed.

The IRF7413A can be used for various applications including switching power supplies, low frequency power conversion, computer power supplies and DC-DC converters. It is also suitable for motor control, high speed switching and load switching. The transistor is also ideal for applications like lighting control, inverters, home appliances and automotive electronics.

The working principle of the IRF7413A can be understood in the context of MOSFETs. MOSFETs, short for Metal Oxide Field Effect Transistors, are transistors with a gate controlled by an electric field. The gate determines the amount of current flowing between the drain and source terminals, depending on the voltage applied to the gate. The gate will open a channel when a sufficient voltage is applied, allowing a current to flow between the drain and source. This action is known as depletion mode operation.

The IRF7413A operates in the depletion mode. This means that the gate of the transistor must be held at a low voltage in order to keep the channel open. When the bipolar voltage at the gate is increased, current flows freely between the source and the drain. The gate threshold voltage (VGS) determines the amount of current that can flow through the channel, depending on the voltage applied to the gate. The maximum drain current (ID) is the maximum permissible current that can flow through the channel at a given voltage. The current rating of the transistor can be measured by the device\'s drain-source breakdown voltage (VDS) and its on-resistance rating (Rdson).

The IRF7413A offers a range of features that make it an excellent choice for high current and high frequency applications. For instance, its low Rdson, high voltage and excellent switching speed give it superior performance compared to other depletion-mode transistors. In addition, its low on-resistance and thermal resistance provide low power loss, making it ideal for applications with high power requirements. Moreover, its Schottky diode protection feature reduces its susceptibility to over-voltage or electromagnetic interference.

The IRF7413A is an ideal solution for various applications requiring high current, low frequency switching. Its low Rdson, high voltage, fast switching speed and durability makes it a perfect choice for applications ranging from motor control, lighting control, and DC-DC converters to computer power supplies and home appliances. It is a cost-effective and reliable device that can be used in both commercial and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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