IRF7420 Allicdata Electronics
Allicdata Part #:

IRF7420-ND

Manufacturer Part#:

IRF7420

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 12V 11.5A 8-SOIC
More Detail: P-Channel 12V 11.5A (Tc) 2.5W (Ta) Surface Mount 8...
DataSheet: IRF7420 datasheetIRF7420 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 900mV @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3529pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 14 mOhm @ 11.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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Power MOSFETs serve as the driving element for motor and high-current switching applications. The IRF7420 is a popular power MOSFET that provides reliable performance even in high-powered applications. This article will discuss the application fields of the IRF7420, as well as its working principle.

Application Fields of IRF7420

The IRF7420 is a high-power MOSFET, meaning it is designed to handle a high level of current. It is perfect for applications that need fast switching and high efficiency. It is commonly used as a driving element for motors or as a switch in power amplifier applications. It is also used in charging circuits and power converters. Additionally, it is commonly found in automotive, industrial, and consumer electronics applications.

The IRF7420 is designed to handle up to 100V and has a maximum current rating of 5.5A. It has a low on-state resistance, meaning it can handle higher currents with less loss. It also has a low threshold voltage of 2.0V. This makes it ideal for high-power applications, as it can provide reliable performance even in demanding conditions.

Working Principle of IRF7420

The IRF7420 is a voltage-controlled device, meaning it is activated and deactivated by an applied voltage. When the voltage is applied, it allows current to flow from drain to source. When the voltage is removed, the current is cut off. This is because the gate-to-source voltage of the device must be above a certain threshold in order for it to be activated. The threshold voltage of the IRF7420 is 2.0V.

The IRF7420 also has protection diodes built into its design. These diodes prevent the device from being damaged in the event of an overvoltage. The protection diodes limit the voltage that can be applied to the device and protect it from damage. This allows it to withstand higher current and voltage levels than other MOSFETs.

Finally, the IRF7420 is also protected by a parasitic bipolar transistor. This is a transistor that is formed spontaneously within the device as a result of the semiconductor material used. This transistor has a high gain and can help protect the device from high voltages.

Conclusion

The IRF7420 is a popular power MOSFET designed for high-power applications. It is suitable for motor and high-power switching applications, as well as for charging circuits and power converters. It has a low on-state resistance and a low threshold voltage, making it ideal for high-power applications. It is also protected by protection diodes and a parasitic bipolar transistor, making it capable of withstanding high voltages and currents.

The specific data is subject to PDF, and the above content is for reference

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