| Allicdata Part #: | IRF7420PBF-ND |
| Manufacturer Part#: |
IRF7420PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET P-CH 12V 11.5A 8-SOIC |
| More Detail: | P-Channel 12V 11.5A (Tc) 2.5W (Ta) Surface Mount 8... |
| DataSheet: | IRF7420PBF Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 900mV @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3529pF @ 10V |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 14 mOhm @ 11.5A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 11.5A (Tc) |
| Drain to Source Voltage (Vdss): | 12V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Tube |
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IRF7420PBF is a N-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a sensitive gate type transistor that is suitable for high frequency switching applications, such as power management, battery management, motor drive, and other precision control circuits. It is also used in switching and amplification circuits of communication systems.
The IRF7420PBF is a high-capacitance, low-resistance MOSFET offering unmatched combination of power density, speed, and ruggedness. It features an n-channel enhancement type MOSFET, which operates with a logic-level gate voltage as low as 0.8V and a maximum gate threshold of -4V. With a junction temperature range of -55 to 175 degrees celcius, it can provide excellent reliability, even in extreme temperature environments.
The IRF7420PBF is designed to be used in switch mode power supplies (SMPS), general-purpose switching circuits, and battery management applications. It is also widely used in automotive, industrial, and medical applications. Its low gate threshold and wide operating range make it ideal for use in nearly any switching and amplification circuit that requires low on-resistance and fast switching speed.
The IRF7420PBF operates on the basic principle of field effect transistors. In a field effect transistor, a voltage is applied on the gate terminal to control the current passing through the drain and source terminals. This is known as the input impedance of the device, which determines its gain and switching speed. A higher input impedance leads to a higher frequency performance, faster switching speed and improved power efficiency.
The IRF7420PBF also includes several unique features. It has a low gate charge, which is responsible for its low input impedance, making it ideal for applications that require high switching speed. It also features an internal ESD protection, which protects the device from damage due to electrostatic discharge. The device also has an excellent power dissipation rating of up to 10W, allowing it to handle high power loads while still providing low output impedance.
Overall, the IRF7420PBF is an ideal choice for applications requiring high switching speeds, low on-resistance, and wide operating temperatures. With its low gate charge and ESD protection, it offers reliability and protection even in extreme environments, making it a reliable and efficient choice for your specific application.
The specific data is subject to PDF, and the above content is for reference
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IRF7420PBF Datasheet/PDF