IRF7420TR Allicdata Electronics
Allicdata Part #:

IRF7420TR-ND

Manufacturer Part#:

IRF7420TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 12V 11.5A 8-SOIC
More Detail: P-Channel 12V 11.5A (Tc) 2.5W (Ta) Surface Mount 8...
DataSheet: IRF7420TR datasheetIRF7420TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 900mV @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3529pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 14 mOhm @ 11.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRF7420TR is one of today\'s popular power MOSFETs. It was first produced by the U.S. technology company International Rectifier in 1980 and is widely used in high power switching applications. This MOSFET is seen mostly in the form of a single-channel package, but it is also available in dual packages for two-channel applications. Its maximum withstand voltage (VDSS) is 20V, and its maximum drain current (ID) is 6.9A. It also has a channel frequency of 3MHz and a gate threshold voltage of 1.2V.

With such parameters it is ideal for use in switching applications that require low on-state resistance, such as line-powered home appliances, automobiles, and renewable energy systems. It is usually used in power supplies, lighting control, motor control, and other applications that require high frequency and high current switching.

The IRF7420TR has a metal-oxide-semiconductor field-effect transistor (MOSFET) as its active component and relies on the principles of electrostatics to control the flow of current. This makes it much more efficient than typical bipolar Junction transistors, with fewer losses from heat. When a suitable voltage is applied to the gate of the MOSFET, it changes its impedance from a high resistance state to a lower resistance state. This allows it to control the electrical current without dissipating excessive power.

To complete the switching action, two MOSFETs are used in a complementary design. One MOSFET is used to switch on the load, while the other is used to switch it off. This is done by exchanging the voltage applied to their gates. When one unit is switched on, the other is switched off and vice versa. This allows for a complete switching cycle and provides a way to manage current during an on or off cycle.

The IRF7420TR has a wide range of applications where a high efficiency, low power switching is needed. It can be used in a variety of fields and applications, such as automotive, lighting, power supplies and renewable energy systems. It is well-known for its robustness and long-term reliability and is widely used due to its low on-resistance, high frequency capability and low power dissipation.

In summary, the IRF7420TR is a popular power MOSFET from International Rectifier that is used in a wide array of applications. It has robust features such as low on-resistance, high frequency capability and low power dissipation, making it a reliable choice in switching and controlling electrical current. Its dual MOSFET arrangement also allows for a complete cycle of on and off switching, allowing for a more efficient handling of current flow.

The specific data is subject to PDF, and the above content is for reference

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