IRF7420TRPBF Allicdata Electronics
Allicdata Part #:

IRF7420PBFTR-ND

Manufacturer Part#:

IRF7420TRPBF

Price: $ 0.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 12V 11.5A 8-SOIC
More Detail: P-Channel 12V 11.5A (Tc) 2.5W (Ta) Surface Mount 8...
DataSheet: IRF7420TRPBF datasheetIRF7420TRPBF Datasheet/PDF
Quantity: 8000
4000 +: $ 0.30987
Stock 8000Can Ship Immediately
$ 0.34
Specifications
Vgs(th) (Max) @ Id: 900mV @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3529pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 14 mOhm @ 11.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRF7420TRPBF Application Field and Working Principle

The IRF7420TRPBF is a popular Field-Effect Transistor (FET), used as an electronic switch in a range of peripheral circuits and applications. It is a MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) with a voltage rating of 500V and a drain-source on resistance of 167 mΩ. The IRF7420TRPBF is mainly used in automotive, communications, computer, audio and consumer electronics applications.

MOSFETs, in general, work by using an electric field to control the shape and percentage of a conductive channel between the source and drain terminals (which usually act as a gate when no external gate drive is present). This is done through a process called electron-hole injection, which uses voltage to create holes in the semiconductor channel that can be used to control the flow of electrons (or current). When the gate voltage is below a certain threshold, the MOSFET is non-conductive; when the gate voltage increases above the threshold, the MOSFET turns on and current flows through it.

Operation Modes

The IRF7420TRPBF can operate in three different types of modes; the common source, common source with source follower, and common gate mode. In the common source mode, the drain and gate are tied together and the source acts as an input. When the input is a positive voltage, the MOSFET acts as an open switch and does not allow current to flow between the source and the drain. As the voltage becomes more positive, the MOSFET begins to allow current to flow. The common source with source follower mode is similar to the common source, except for the addition of an extra “follower” transistor. This transistor is placed between the source and the drain, and acts to amplify the signal from the source.

The third mode is the common gate, where the source and gate are tied together. This mode is typically used to produce high input impedance, allowing the device to be sensitive to small signals. In common gate mode, the MOSFET functions as an open switch and will not allow current to flow unless the source voltage is above a certain threshold.

Advantages

MOSFETs offer a number of advantages over other types of transistors, including:

  • Low power consumption
  • High input impedance
  • High speed switching
  • Low on-resistance
  • Low noise levels

The IRF7420TRPBF is also designed to minimize noise, EMC (Electromagnetic Compatibility) susceptibility, and switching losses. This makes it an ideal choice for a wide range of applications, from automotive to telecommunications.

Conclusion

The IRF7420TRPBF is a popular single MOSFET that is used in a variety of circuits and applications. Its low-power consumption and low-noise design make it suitable for applications where power and noise are critical concerns. Its ability to operate in three different modes, combined with its high input impedance and fast switching speeds, make it a great choice for many types of applications.

The specific data is subject to PDF, and the above content is for reference

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